1N60
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25℃, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS=0V, ID=250μA
600
V
10 μA
100 nA
-100 nA
V/℃
VDS=600V, VGS=0V
VGS=30V, VDS=0V
VGS=-30V, VDS=0V
Forward
Reverse
Gate-Source Leakage Current
IGSS
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA
0.4
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250μA
2.0
4.0
9.3 11.5
V
VGS=10V, ID=0.6A
Ω
CISS
COSS
CRSS
120 150 pF
20 25 pF
3.0 4.0 pF
Output Capacitance
VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
tR
tD(OFF)
tF
5
25
7
20
60
25
60
ns
ns
ns
ns
Turn-On Rise Time
VDD=300V, ID=1.2A, RG=50Ω
(Note 2,3)
Turn-Off Delay Time
Turn-Off Fall Time
25
Total Gate Charge
QG
5.0 6.0 nC
VDS=480V, VGS=10V, ID=1.2A
(Note 2,3)
Gate-Source Charge
QGS
QGD
1.0
2.6
nC
nC
Gate-Drain Charge
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
VGS=0V, IS =1.2A
1.4
1.2
V
A
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
4.8
A
Reverse Recovery Time
trr
160
0.3
ns
VGS=0V, IS=1.2A
dIF/dt=100A/μs (Note 1)
Reverse Recovery Charge
QRR
μC
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%
3. Essentially Independent of Operating Temperature
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-052.N
www.unisonic.com.tw
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