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1N60G-TMS2-T 参数 Datasheet PDF下载

1N60G-TMS2-T图片预览
型号: 1N60G-TMS2-T
PDF下载: 下载PDF文件 查看货源
内容描述: [Power Field-Effect Transistor,]
分类和应用: 开关脉冲晶体管
文件页数/大小: 7 页 / 361 K
品牌: UTC-IC [ UNISONIC TECHNOLOGIES ]
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1N60
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°С, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
600
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
1.2
A
Continuous Drain Current
I
D
1.2
A
Pulsed Drain Current (Note 2)
I
DM
4.8
A
Single Pulsed (Note 3)
E
AS
50
mJ
Avalanche Energy
Repetitive (Note 2)
E
AR
4.0
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
SOT-223
8
TO-251/TO-252
TO-252D/TO-251S
28
TO-251S2/ TO-251S4
TO-220
40
Power Dissipation
P
D
W
TO-220F
21
TO-220F2
23
TO-92(T
A
=25°С)
1
TO-126
12.5
Junction Temperature
T
J
+150
°С
Operating Temperature
T
OPR
-55 ~ +150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 60mH, I
AS
= 1A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
4. I
SD
1.2A, di/dt
200A/μs, V
DD
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
SYMBOL
RATINGS
150
110
θ
JA
62.5
62.5
140
132
14
4.53
θ
Jc
3.13
5.95
5.43
80
10
°С/W
°С/W
UNIT
PARAMETER
SOT-223
TO-251/TO-252
TO-252D/TO-251S
TO-251S2/ TO-251S4
Junction to Ambient
TO-220/TO-220F
TO-220F2
TO-92
TO-126
SOT-223
TO-251/TO-252
TO-252D/TO-251S
TO-251S2/ TO-251S4
TO-220
Junction to Case
TO-220F
TO-220F2
TO-92
TO-126
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 7
QW-R502-052.N