1N60
Power MOSFET
■
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
IAR
RATINGS
600
±30
1.2
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
V
Avalanche Current (Note 2)
Continuous Drain Current
Pulsed Drain Current (Note 2)
A
ID
1.2
A
IDM
4.8
A
Single Pulsed (Note 3)
Repetitive (Note 2)
EAS
50
mJ
mJ
V/ns
Avalanche Energy
EAR
4.0
Peak Diode Recovery dv/dt (Note 4)
SOT-223
dv/dt
4.5
8
TO-251/TO-252
TO-252D/TO-251S
TO-251S2/ TO-251S4
TO-220
28
40
21
Power Dissipation
PD
W
TO-220F
TO-220F2
23
TO-92(TA=25°С)
TO-126
1
12.5
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
-55 ~ +150
-55 ~ +150
°С
°С
°С
TOPR
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 60mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 1.2A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
150
UNIT
SOT-223
TO-251/TO-252
TO-252D/TO-251S
TO-251S2/ TO-251S4
TO-220/TO-220F
TO-220F2
110
Junction to Ambient
θJA
°С/W
62.5
62.5
140
132
14
TO-92
TO-126
SOT-223
TO-251/TO-252
TO-252D/TO-251S
TO-251S2/ TO-251S4
TO-220
4.53
3.13
5.95
5.43
80
Junction to Case
θJc
°С/W
TO-220F
TO-220F2
TO-92
TO-126
10
UNISONIC TECHNOLOGIES CO., LTD
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www.unisonic.com.tw
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