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1N60G-TMS2-T 参数 Datasheet PDF下载

1N60G-TMS2-T图片预览
型号: 1N60G-TMS2-T
PDF下载: 下载PDF文件 查看货源
内容描述: [Power Field-Effect Transistor,]
分类和应用: 开关脉冲晶体管
文件页数/大小: 7 页 / 361 K
品牌: UTC-IC [ UNISONIC TECHNOLOGIES ]
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UNISONIC TECHNOLOGIES CO., LTD
1N60
1.2A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
1N60
is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used at
high speed switching applications in power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* R
DS(ON)
<11.5Ω@ V
GS
=10V, I
D
=0.6A
* Ultra Low gate charge (typical 5.0nC)
* Low reverse transfer capacitance (C
RSS
= typical 3.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
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Copyright © 2014 Unisonic Technologies Co., Ltd
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