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1N60G-TMS2-T 参数 Datasheet PDF下载

1N60G-TMS2-T图片预览
型号: 1N60G-TMS2-T
PDF下载: 下载PDF文件 查看货源
内容描述: [Power Field-Effect Transistor,]
分类和应用: 开关脉冲晶体管
文件页数/大小: 7 页 / 361 K
品牌: UTC [ Unisonic Technologies ]
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UNISONIC TECHNOLOGIES CO., LTD  
1N60  
Power MOSFET  
1.2A, 600V N-CHANNEL  
POWER MOSFET  
DESCRIPTION  
The UTC 1N60 is a high voltage MOSFET and is designed to  
have better characteristics, such as fast switching time, low gate  
charge, low on-state resistance and have a high rugged  
avalanche characteristics. This power MOSFET is usually used at  
high speed switching applications in power supplies, PWM motor  
controls, high efficient DC to DC converters and bridge circuits.  
FEATURES  
* RDS(ON) <11.5@ VGS=10V, ID=0.6A  
* Ultra Low gate charge (typical 5.0nC)  
* Low reverse transfer capacitance (CRSS = typical 3.0 pF)  
* Fast switching capability  
* Avalanche energy specified  
* Improved dv/dt capability, high ruggedness  
SYMBOL  
www.unisonic.com.tw  
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Copyright © 2014 Unisonic Technologies Co., Ltd  
QW-R502-052.N  
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