X-band High Power Amplifier
Typical measured characteristics
Measurements on Jig:
CHA7215
Vd=8V, Id (Quiescent) = 2.3A, Drain Pulse width = 25µs, Duty cycle = 10%
38
36
34
Temp=-40°
C
Temp=+20°
C
Temp=+80°
C
Linear Gain (dB)
32
30
28
26
24
22
20
18
8
8,5
9
9,5
10
10,5
11
11,5
12
Frequency (GHz)
Linear gain versus frequency and temperature
42
Linear Gain (dB) & Output Power (dBm) @10GHz
40
38
36
34
32
30
28
26
24
22
20
18
16
0
Temp=-40°
C
Temp=-40°
C
Temp=+20°C
Temp=+20°C
Temp=+80°C
Temp=+80°C
Pout
Gain
2
4
6
8
10
12
14
16
18
20
Input Power (dBm)
Linear Gain and Output Power @Freq=10GHz
versus input power and temperature
Ref : DSCHA72159287 - 14 Oct 09
3/8
Specifications subject to change without notice
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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
