CHA7215
X-band High Power Amplifier
Electrical Characteristics on test fixture
Tamb = 20° Vd=8V, Id (Quiescent) = 2.3A, Drain Pu lse width = 25µs, Duty cycle = 10%
C,
Symbol
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency
8.5
11.5
GHz
G
Small signal gain
25
28
31
dB
Small signal gain variation versus
-0.05
dB/°
C
G_T
temperature
RLin
Input Return Loss
10
dB
RLout
Output Return Loss
12
dB
Psat
Saturated output power
39.5
dBm
Saturated output power variation versus
-0.01
dB/°
C
Psat_T
temperature
PAE_4dBc
Power added efficiency @4dBc
34
%
Id_4dBc
Supply drain current @ 4dBc
3.3
4.4
A
Vd1, Vd2, Vd3
Drain supply voltage (2)
8
V
Id
Supply quiescent current (1)
2.3
A
Vg1, Vg2, Vg3
Gate supply voltage
-2.2
V
(1) Parameter can be adjusted by tuning of Vg.
(2) 0.5V variation on Vd leads to around 0.4dB variation of the output power (impact on
robustness see Maximum ratings)
Absolute Maximum Ratings (1)
Tamb = 20°
C
Symbol
Parameter
Values
Unit
Cmp
Compression level (2)
6
dBc
Vd
Supply voltage with RF input power
9
V
Vd
Supply voltage without RF input power
10
V
Id
Supply quiescent current
3
A
Id_sat
Supply current in saturation
4.8
A
Vg
Supply voltage
-1.1
V
Tj
Maximum junction temperature
175
°
C
Tstg
Storage temperature range
-55 to +125
°
C
Top
Operating temperature range
-40 to +80
°
C
(1)
Operation of this device above anyone of these parameters may cause
permanent damage.
(2)
For higher compression the level limit can be increased by decreasing the voltage
Vd using the rate 0.5 V / dBc
Ref : DSCHA72159287 - 14 Oct 09
2/8
Specifications subject to change without notice
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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
