CHA7215
RoHS COMPLIANT
X-band High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA7215 is a monolithic three-stage
GaAs high power amplifier designed for X
band applications.
The HPA provides typically 9W output power
associated to 35% power added efficiency at
4dBc and a high robustness on mismatch
load.
This device is manufactured using 0.25 µm
Power pHEMT process, including, via holes
through the substrate and air bridges.
●
IN
VG1R
VD1
VG2R
VD2
VG3R
VD3
● ●
● ●
● ●
●
OUT
●
VD1
●
VD2
VG3R
● ●
VD3
Output Power versus Frequency @Pin=19dBm
41
40,5
40
O u tp u t P o w e r (d B m )
Main Features
0.25 µm Power pHEMT Technology
Frequency band: 8.5 – 11.5GHz
Output power: 39.5dBm at saturation
High linear gain: 28dB
Power added efficiency: 34% @4dBc
Quiescent bias point: Vd=8V, Id=2.3A
Chip size
:
5 x 3.31 x 0.07mm
39,5
39
38,5
38
37,5
37
36,5
36
35,5
35
8
8,5
9
9,5
10
10,5
11
11,5
12
Temp=-40°C
Temp=+20°C
Temp=+80°C
Frequency (GHz)
Main Characteristics
Vd=8V, Id (Quiescent) = 2.3A, Drain Pulse width = 25µs, Duty cycle = 10%
Symbol
Top
Fop
PAE_4dBc
Psat
G
Parameter
Operating temperature range
Operating frequency range
Power added efficiency @4dBc @ 20°
C
Saturated output power @ 20°
C
Small signal gain @ 20°
C
Min
-40
8.5
Typ
Max
+80
11.5
Unit
°
C
GHz
%
dBm
34
39.5
25
28
31
dB
ESD Protections: Electrostatic discharge sensitive device. Observe handling precautions!
Ref : DSCHA72159287 - 14 Oct 09
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
