CHA6005-99F
Typical Test Fixture Measurements
8-12GHz High Power Amplifier
Tamb.= +25°C,
Vd = 8V, Id (Quiescent) = 350mA, Drain Pulse width = 25µs, Duty cycle = 10%
Power added efficiency @ 1 & 3dBcomp versus Frequency
44
43
42
PAE (%) @ ~ 1 & 3dBcomp
41
40
39
38
37
36
35
34
33
32
31
30
8
8.5
9
9.5
10
10.5
11
11.5
12
PAE (%) @ Pin=11 dBm (1dBcomp)
PAE (%) @ Pin=14 dBm (3dBcomp)
Freq (GHz)
Drain current @ 1 & 3dBcomp versus Frequency
800
700
IDrain (mA) @ ~ 1 & 3dBcomp
600
500
400
300
Idrain @ Pin=14 dBm (3dBcomp)
200
Idrain @ Pin=11 dBm (1dBcomp)
100
0
8
8.5
9
9.5
10
10.5
11
11.5
12
Freq (GHz)
Ref. : DSCHA60052244 - 31 Aug 12
6/10
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
