8-12GHz High Power Amplifier
Absolute Maximum Ratings
(1)
CHA6005-99F
Tamb.= +25°C
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
9.0
V
Id
Drain bias current
550
mA
Vg
Gate bias voltage
-0.6
V
Pin
Maximum peak input power overdrive
(2)
+20
dBm
Tj
Junction temperature
175
°C
Ta
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +150
°C
(1)
Operation of this device above anyone of these parameters may cause permanent damage.
(2)
Duration < 1s.
Typical Bias Conditions
Tamb.= +25°C
Symbol
Pad N
o
V1
V1
V2
V2
Parameter
Drain supply voltage
Gaye supply voltage
Values
8
-1
Unit
V
V
Ref. : DSCHA60052244 - 31 Aug 12
3/10
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
