8-12GHz High Power Amplifier
Typical on Test Fixture Measurements
CHA6005-99F
Tamb.= +25°C,
Vd = 8V, Id (Quiescent) = 350mA, Drain Pulse width = 25µs, Duty cycle = 10%
Linear Gain versus Frequency
25
23
Linear Gain (dB)
21
19
17
15
8
8.5
9
9.5
10
10.5
11
11.5
12
Freq (GHz)
Output Power @ 1&3dBcomp versus Frequency
36
35
Pout @ ~ 1 & 3dBcomp
34
33
32
31
30
Pout @ Pin=11 dBm (1dBcomp)
29
Pout @ Pin=14 dBm (3dBcomp)
28
8
8.5
9
9.5
10
10.5
11
11.5
12
Freq (GHz)
Ref. : DSCHA60052244 - 31 Aug 12
5/10
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
