TQP3M9008
High Linearity LNA Gain Block
Device Characterization
Vdd = +5 V, Idd = 85 mA, T = +25 °C, calibrated to device leads
Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang)
50
-12.52
-11.90
-11.41
-11.36
-11.58
-11.76
-12.33
-12.65
-13.27
-13.58
-13.92
-14.30
-15.07
-15.75
-16.78
-18.00
-19.76
-19.90
-17.79
-14.26
-11.29
-8.73
-170.01
-175.09
177.96
166.96
154.05
147.21
139.09
132.05
126.25
116.91
110.23
103.50
94.63
23.61
23.48
23.07
22.66
22.31
21.98
21.71
21.41
21.02
20.78
20.45
20.30
19.92
19.71
19.45
19.22
18.95
18.64
18.31
17.71
16.98
16.09
172.94
167.73
159.45
144.06
129.39
114.61
99.52
-26.71
-26.65
-26.63
-26.65
-26.65
-26.71
-26.78
-26.92
-27.11
-27.39
-27.60
-28.05
-28.50
-28.73
-29.42
-29.90
-30.63
-31.00
-31.77
-32.84
-33.98
-34.80
0.57
-9.82
-9.88
177.18
171.87
162.15
145.49
129.34
111.77
94.27
100
-1.85
200
-5.51
-10.01
-10.48
-10.67
-11.30
-12.37
-13.06
-14.33
-15.41
-16.28
-17.53
-18.03
-17.43
-16.62
-14.89
-14.06
-13.12
-12.40
-11.92
-11.23
-10.66
400
-12.85
-19.62
-26.09
-33.35
-39.92
-47.72
-56.48
-63.31
-71.56
-80.24
-88.86
-96.81
-105.73
-117.08
-128.03
-139.44
-154.36
-168.14
173.11
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
3200
3400
3600
3800
4000
85.59
77.75
70.96
58.69
56.21
36.83
41.84
15.29
27.87
-11.21
-39.05
-65.92
-94.17
-115.00
-131.67
-148.29
-160.20
-173.86
174.45
167.57
13.81
85.16
-1.08
72.66
-15.98
-31.32
-46.86
-63.51
-80.47
-98.47
-117.12
-135.80
55.24
25.52
-16.80
-58.97
-90.75
-114.34
-132.65
Data Sheet: Rev. J
- 3 of 10-
Disclaimer: Subject to change without notice
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© 2012 TriQuint Semiconductor, Inc.
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