T1G4012036-FS
120W Peak Power, 24W Average Power,
36V DC – 3.5 GHz, GaN RF Power Transistor
Thermal and Reliability Information
Parameter
Test Conditions
Value
1.62
Units
ºC/W
°C
Thermal Resistance (θJC)
Channel Temperature (TCH)
Notes:
DC at 85 °C Case
225
Thermal resistance measured to bottom of package, CW.
Median Lifetime
Maximum Channel Temperature
TBASE = 85°C, PD = 144 W
Datasheet: Rev B 02-24-15
Disclaimer: Subject to change without notice
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