T1G4012036-FS
120W Peak Power, 24W Average Power,
36V DC – 3.5 GHz, GaN RF Power Transistor
Evaluation Board Performance (1, 2)
Performance at 3 dB Compression
Notes:
1. Test Conditions: VDS = 36 V, IDQ = 360 mA
2. Test Signal: Pulse Width = 100 µs, Duty Cycle = 20 %
Application Circuit
Bias-up Procedure
Bias-down Procedure
Set gate voltage (VG) to -5.0V
Set drain voltage (VD) to 36 V
Slowly increase VG until quiescent ID is 360 mA.
Apply RF signal
Turn off RF signal
Turn off VD and wait 1 second to allow drain capacitor
dissipation
Turn off VG
Datasheet: Rev B 02-24-15
Disclaimer: Subject to change without notice
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