T1G4012036-FS
120W Peak Power, 24W Average Power,
36V DC – 3.5 GHz, GaN RF Power Transistor
RF Characterization – Performance at 3.3 GHz (1, 2)
Test conditions unless otherwise noted: TA = 25 °C, VD = 36 V, IDQ = 360 mA
Symbol Parameter
Min
Typical
16.0
Max
Units
dB
GLIN
Linear Gain
15.0
100.0
50.0
P3dB
Output Power at 3 dB Gain Compression
Drain Efficiency at 3 dB Gain Compression
Gain at 3 dB Compression
120.0
52.0
W
DE3dB
G3dB
%
12.0
13.0
dB
Notes:
1. Performance at 3.3 GHz in the 3.1 to 3.5 GHz Evaluation Board
2. VDS = 36 V, IDQ = 360 mA; Pulse: 100µs, 20%
RF Characterization – Narrow Band Performance at 3.50 GHz (1)
Test conditions unless otherwise noted: TA = 25 °C, VD = 36 V, IDQ = 360 mA
Symbol Parameter
Typical
VSWR Impedance Mismatch Ruggedness
10:1
Notes:
1. VDS = 36 V, IDQ = 360 mA, CW at P3dB
Datasheet: Rev B 02-24-15
Disclaimer: Subject to change without notice
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