T1G4012036-FS
120W Peak Power, 24W Average Power,
36V DC – 3.5 GHz, GaN RF Power Transistor
Evaluation Board Layout
Top RF layer is 0.020” thick Rogers RO4350B, ɛr = 3.48. The pad pattern shown has been developed and tested for optimized
assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances.
Bill of Materials
Reference Design
Value
12.55 nH
12.5 nH
1.6 nH
51 ohms
1000 ohms
1.8 pF
Qty Manufacturer
Part Number
1606-10_L
L1
1
1
1
1
1
1
2
2
1
1
1
1
1
Coilcraft
Coilcraft
Coilcraft
Vishay/Dale
Vishay/Dale
ATC
L2
A04T_L
L3
0603HC-1N6X_L
CRCW120651R0FKEA
CRCW12061K00FKTA
600S1R8BT
R1
R2
C1
C2, C3
C4, C9
C5
15 PF
ATC
600S150JT250XT
800B102JT50XT
C1206C103KRAC7800
18121C105KAT2A
T4910D
1000 pF
0.01 uF
1 uF
ATC
Kemet
C6
Allied
C7
22 uF
Sprague
Murata
C8
2400 pF
220 uF
C08BL242X-5UN-X0T
EMVY500ADA221MJA0G
C10
United Chemi-Con
Datasheet: Rev B 02-24-15
Disclaimer: Subject to change without notice
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