T1G4003532-FS
35W, 32V, DC – 3.5 GHz, GaN RF Power Transistor
Performance over Temperature: Gain, Efficiency and Output Power
Performance measured in TriQuint’s 2.7 GHz to 3.5 GHz Evaluation Board at 3 dB compression.
T1G4003532-FS Gain vs. Temp
VDS = 32 V, IDQ = 150 mA; Pulse: 100 µs, 20%
.
T1G4003532-FS Power vs. Temp.
V DS = 32 V, IDQ = 150 mA; Pulse: 100 µs, 20%
T1G4003532-FS Drain Eff. vs. Temp.
VDS = 32 V, IDQ = 150 mA; Pulse: 100 µs, 20%
T1G4003532-FS PAE vs. Temp.
V DS = 32 V, IDQ = 150 mA; Pulse: 100 µs, 20%
Data Sheet: Rev A 10/18/2012
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Disclaimer: Subject to change without notice
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