T1G4003532-FS
35W, 32V, DC – 3.5 GHz, GaN RF Power Transistor
Specifications
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Drain to Gate Voltage, Vd – Vg
Drain Voltage, Vd
Gate Voltage, Vg
Rating
40 V
+40 V
-8 to 0 V
4.5 A
Parameter
Vd
Idq
Id (Peak Current)
Vg
Min Typical Max Units
32
150
2400
-3.9
V
mA
mA
V
Drain Current, Id
Gate Current, Ig
Power Dissipation, Pdiss
-7.5 to 7.5 mA
40 W
Channel
200
oC
W
W
Temperature, Tch
Power Dissipation,
Pdiss (CW)
Power Dissipation,
Pdiss (Pulse)
RF Input Power, CW, T = 25 oC 38.75 dBm
24.5
35
Channel Temperature, Tch
Mounting Temperature (30 sec) 320 oC
Storage Temperature
275 oC
-40 to 150 oC
Operation of this device outside the parameter ranges
given above may cause permanent damage. These
are stress ratings only, and functional operation of the
device at these conditions is not implied. Refer to the
Median Life Time plot on pg. 3 for additional
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
information regarding channel temperature.
Electrical Specifications
Recommended operating conditions apply unless otherwise specified: TA = 25 °C, Vd = 32 V, Idq = 150 mA, Vg = -3.9 V
RF Characteristics
Characteristics
Symbol
Min
Typ
Max
Units
Load Pull Performance at 1.0 GHz (VDS = 32 V, IDQ = 150 mA; Pulse: 100µs, 20%)
GLIN
Linear Gain
23.0
40.1
73.0
72.5
20.0
dB
W
%
%
dB
Output Power at 3 dB Gain Compression
Drain Efficiency at 3 dB Gain Compression
Power-Added Efficiency at 3 dB Gain Compression
Gain at 3 dB Compression
P3dB
DE3dB
PAE3dB
G3dB
Load Pull Performance at 3.5 GHz (VDS = 32 V, IDQ = 150 mA; Pulse: 100µs, 20%)
Linear Gain
GLIN
P3dB
DE3dB
PAE3dB
G3dB
18.8
42.6
62.1
60.5
15.8
dB
W
%
%
dB
Output Power at 3 dB Gain Compression
Drain Efficiency at 3 dB Gain Compression
Power-Added Efficiency at 3 dB Gain Compression
Gain at 3 dB Compression
Performance at 3.5 GHz in the 2.7 to 3.5 GHz Eval. Board (VDS = 32 V, IDQ = 150 mA; Pulse: 100µs, 20%)
Linear Gain
GLIN
P3dB
DE3dB
PAE3dB
G3dB
16.0
33.0
53.0
48.0
13.0
17.0
37.0
57.0
54.0
14.0
dB
W
%
%
dB
Output Power at 3 dB Gain Compression
Drain Efficiency at 3 dB Gain Compression
Power Added Efficiency at 3 dB Compression
Gain at 3 dB Compression
Narrow Band Performance at 3.50 GHz (VDS = 32 V, IDQ = 150 mA, CW at P1dB)
Impedance Mismatch Ruggedness
VSWR
10:1
Data Sheet: Rev A 10/18/2012
- 2 of 13 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
© 2012 TriQuint Semiconductor, Inc.
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
