T1G4003532-FS
35W, 32V, DC – 3.5 GHz, GaN RF Power Transistor
Load Pull Smith Chart
RF performance that the device typically exhibits when placed in the specified impedance environment. The
impedances are not the impedances of the device, they are the impedances presented to the device via an
RF circuit or load-pull system. The impedances listed follow an optimized trajectory to maintain high power
and high efficiency.
Test Conditions: VDS = 32 V, IDQ = 150 mA
Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20%
Load-Pull Data at 1.0 GHz
Load-Pull Data at 2.0 GHz
Load-Pull Data at 3.1 GHz
Load-Pull Data at 3.5 GHz
Data Sheet: Rev A 10/18/2012
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Disclaimer: Subject to change without notice
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