T1G4003532-FS
35W, 32V, DC – 3.5 GHz, GaN RF Power Transistor
Evaluation Board Performance: 2.7 to 3.5 GHz
Output Power and Gain at 3 dB Compression
VDS = 32 V, IDQ = 150 mA; Pulse: 100 µsec, 20%
55.00
20.00
18.00
16.00
14.00
12.00
10.00
8.00
Power (W)
50.00
Gain (dB)
45.00
40.00
35.00
30.00
25.00
20.00
15.00
6.00
4.00
2.70
2.80 2.90
3.00 3.10
3.20 3.30
3.40 3.50
Frequency (GHz)
Drain Efficiency and Power Added Efficiency at 3 dB Compression
VDS = 32 V, IDQ = 150 mA; Pulse: 100 µsec, 20%
65
60
55
50
45
40
35
Drain Eff. (%)
PAE (%)
2.70
2.80
2.90
3.00
3.10
3.20
3.30
3.40
3.50
Frequency (GHz)
Data Sheet: Rev A 10/18/2012
© 2012 TriQuint Semiconductor, Inc.
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Disclaimer: Subject to change without notice
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