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AH225-S8G 参数 Datasheet PDF下载

AH225-S8G图片预览
型号: AH225-S8G
PDF下载: 下载PDF文件 查看货源
内容描述: [1W High Linearity InGaP HBT Amplifier]
分类和应用:
文件页数/大小: 21 页 / 1577 K
品牌: TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
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AH225  
1W High Linearity InGaP HBT Amplifier  
Application Circuit 920-960 MHz (AH225-S8PCB900)  
J3  
Vcc=+5V  
J5 GND  
C7  
C7  
10 uF 6032  
C17  
J4 Vref  
R7  
0
C17  
C1  
D3  
C12  
R8  
Vpd  
J4  
0.1 uF 0805  
C1  
J3  
R6  
DNP  
0
D3  
SM05T1G  
C15  
C12  
1000 pF  
L1  
C3  
FB1  
1000 pF  
R3  
51  
R1  
120  
C15  
R2  
C10  
U1  
C3  
C9  
C11  
47 pF  
L4  
0
L3  
22 nH  
L1  
33 nH  
1008  
U1  
AH225  
R2  
51  
1
8
7
6
5
J5  
C3  
2
3
4
C6  
C9  
J2  
C11  
0
J1  
RF  
Output  
0
C10  
10 pF  
RF  
Input  
C2  
3.9 pF  
L2  
3.3 nH  
Backside  
Paddle  
5.6 pF  
22 pF  
Notes:  
1. See PC Board Layout, page 20 for more information.  
2. Vref J4 turret can be used as control voltage for device power down (low = RF off) by setting R8 = 0 and R8 = no connect.  
3. The primary RF microstrip characteristic line impedance is 50 .  
4. Do not exceed +5.5V on Vpd or Vcc or TVS diode D3 will be damaged.  
5. Components shown on the silkscreen but not on the schematic are not used.  
6. The edge of L2 is placed at 170 mils from the edge of AH225 RFin pin pad (8.5° at 940 MHz).  
7. The edge of C9 is placed at 80 mils from the edge of AH225 RFin pin pad (4° at 940 MHz).  
8. The edge of C2 is placed at 220 mils from the edge of AH225 RFout pin pad (11° at 940 MHz).  
9. Zero ohm jumpers may be replaced with copper traces in the target application layout. C2 location will need to be re-optimized if  
replaced with copper trace.  
10. DNP means Do Not Place.  
11. Inductor L3 on Vpd line is critical for linearity performance.  
12. The locations of C11, R2, C10 and C3 are non-critical. They can be placed closer to the device.  
13. Ferrite Bead FB1 eliminates bypass line resonances between C15 and C1. Steward MI0603K300R-10.  
14. All components are of 0603 size unless stated otherwise.  
Typical Performance 920-960 MHz  
Frequency  
Gain  
MHz  
dB  
dB  
920  
19.7  
9.6  
940  
19.8  
10.5  
8.4  
960  
19.9  
10.4  
9
Input Return Loss  
Output Return Loss  
Output P1dB  
dB  
8
dBm  
dBm  
dBm  
dB  
+31.1  
+46.2  
+21.6  
9.3  
+31  
+47.3  
+21.7  
9.2  
+31.1  
+48  
+21.6  
9.3  
Output IP3 at 22 dBm/tone, f = 1 MHz  
WCDMA Channel Power at -50 dBc ACLR [1]  
Noise Figure  
Supply Voltage, Vcc  
Quiescent Collector Current, Icq  
V
mA  
+5  
300  
Notes:  
1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.  
Data Sheet: Rev F 05/17/12  
Disclaimer: Subject to change without notice  
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© 2012 TriQuint Semiconductor, Inc.  
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