AH225
1W High Linearity InGaP HBT Amplifier
Reference Design 700-850 MHz
Notes:
1. See PC Board Layout, page 20 for more information.
2. Vref J4 turret can be used as control voltage for device power down (low = RF off) by setting R8 = 0 ꢀ and R7 = no connect.
3. The primary RF microstrip characteristic line impedance is 50 ꢀ.
4. Do not exceed +5.5V on Vpd or Vcc or TVS diode D3 will be damaged.
5. Components shown on the silkscreen but not on the schematic are not used.
6. The edge of C6 is placed at 70 mils from the edge of AH225 RFout pin pad (3° at 750 MHz).
7. C5 is placed against the edge of C6.
8. The edge of R5 is placed at 10 mils from the edge of AH225 RFin pin pad (0.5° at 750 MHz).
9. C8 is placed against the edge of R5, L2 against C8 and C9 against L2.
10. Zero ohm jumpers may be replaced with copper traces in the target application layout.
11. DNP means Do Not Place.
12. Inductor L3 on Vpd line is critical for linearity performance.
13. The locations of C11, R2, C10 and C3 are non-critical. They can be placed closer to the device.
14. Ferrite Bead FB1 eliminates bypass line resonances between C15 and C1. Steward MI0603K300R-10.
15. All components are of 0603 size unless stated otherwise.
Typical Performance 700-850 MHz
Frequency
Gain
MHz
dB
dB
700
20
750
20.1
14.5
7
800
20.2
16
850
20
Input Return Loss
Output Return Loss
Output P1dB
12
6
13.3
11.5
+30.6
+44
dB
8.6
dBm
dBm
dBm
dBm
V
+30.4
+44.1
+20.6
+22.8
+30.4
+45
+30.7
+44.6
+21.4
+23.3
Output IP3 at 20 dBm/tone, ∆f = 1 MHz
WCDMA Channel Power at -50 dBc ACLR [1]
OFDMA Channel Power at 2.5% EVM [2]
Supply Voltage, Vcc
+21.2
+23.6
+21
+23.2
+5
300
Quiescent Collector Current, Icq
mA
Notes:
1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.
2. EVM Test set-up: 802.16 – 2004 OFDMA, 64 QAM – ½, 1024 FFT, 20 symbols, 30 sub channels.
Data Sheet: Rev F 05/17/12
Disclaimer: Subject to change without notice
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