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AH225-S8G 参数 Datasheet PDF下载

AH225-S8G图片预览
型号: AH225-S8G
PDF下载: 下载PDF文件 查看货源
内容描述: [1W High Linearity InGaP HBT Amplifier]
分类和应用:
文件页数/大小: 21 页 / 1577 K
品牌: TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
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AH225  
1W High Linearity InGaP HBT Amplifier  
Specifications  
Absolute Maximum Ratings  
Recommended Operating Conditions  
Parameter  
Rating  
-65 to 150 °C  
+26 dBm  
+8 V  
Parameter  
Vcc  
Min Typ Max Units  
Storage Temperature  
RF Input Power, CW, 50, T=25°C  
Device Voltage,Vcc, Vbias  
Device Current  
+4.5  
-40  
+5  
+5.25  
+85  
+200  
V
°C  
°C  
Tcase  
TJ (for >106 hours MTTF)  
900 mA  
+5 W  
Electrical specifications are measured at specified test conditions.  
Specifications are not guaranteed over all recommended operating  
conditions.  
Device Power  
Operation of this device outside the parameter ranges given  
above may cause permanent damage.  
Electrical Specifications  
Test conditions unless otherwise noted: Vcc = +5 V, Icq = 300 mA, T = +25°C, in a tuned application circuit.  
Parameter  
Operational Frequency Range  
Conditions  
Min  
400  
Typical  
Max  
2700  
Units  
MHz  
MHz  
dB  
Test Frequency  
Gain  
2140  
15.5  
18  
13.3  
Input Return Loss  
Output Return Loss  
Output P1dB  
dB  
dB  
9.4  
+30  
+43  
+31.2  
+46  
+21.3  
6
dBm  
dBm  
dBm  
dB  
Output IP3  
See Note 1  
See Note 2  
WCDMA Channel Power at -50 dBc ACLR  
Noise Figure  
Vcc, Vbias  
+5  
V
Quiescent Current, Icq  
Iref  
See Note 3  
300  
15  
350  
35  
mA  
mA  
°C/W  
Thermal Resistance (jnc. to case) θjc  
Notes:  
1. 3OIP measured with two tones at an output power of +19 dBm / tone separated by 1 MHz. The suppression on the largest IM3 product  
is used to calculate the 3OIP using a 2:1 rule. 2:1 rule gives relative value w.r.t. fundamental tone.  
2. 3GPP WCDMA, 1 64DPCH, 5 MHz, no clipping, PAR = 10.2 dB at 0.01% Probability.  
3. This corresponds to the quiescent collector current or operating current under small-signal conditions into pins 6 and 7.  
Performance Summary Table  
Test conditions unless otherwise noted: Vcc = +5 V, Icq = 300 mA, T = +25°C, in an application circuit tuned for each frequency.  
Frequency  
Gain  
750 940 1500 1840 1960 2140 2600 MHz  
20.1  
14.5  
7
19.8  
10.5  
8.4  
17  
17.2  
11  
15.1  
11  
15.4  
15.4  
15.2  
18  
13.2  
19.4  
5.5  
dB  
dB  
dB  
Input Return Loss  
Output Return Loss  
Output P1dB  
10.7  
+30.7  
+46  
8.3  
9.4  
+30.4  
+45  
+21.2 +21.7  
+31  
+31.3  
+48  
+22  
+31.3  
+53.6  
+21.7  
+31  
+47  
+21.4  
+30.5 dBm  
+48.7 dBm  
+21.3 dBm  
Output IP3 [See note 4]  
WCDMA Channel Power at -50 dBc ACLR  
+47.3  
+21.6  
Notes:  
4. OIP3 is measured with two tones at an output power of 20 dBm/tone for 750 MHz, 22 dBm/tone for 940 MHz and 19 dBm/tone for 1490,  
1840, 1960, 2140, 2600 MHz application circuits respectively.  
Data Sheet: Rev F 05/17/12  
Disclaimer: Subject to change without notice  
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© 2012 TriQuint Semiconductor, Inc.  
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