AH225
1W High Linearity InGaP HBT Amplifier
Reference Design 1475-1510 MHz
J3
Vcc=+5V
J5 GND
C7
C7
10 uF 6032
C17
J4 Vref
R7
0
C17
D3
R8
C12
Vpd
R6
0
DNP
J4
0.1 uF 0805
J3
D3
C12
SM05T1G
C15
L1
FB1
1000 pF
R3
51
R1
120
C15
R2
C10
U1
C6
C3
C9
C11
10 pF
L4
0
L3
22 nH
L1
18 nH
1008
U1
AH225
R2
51
1
8
7
6
5
C6
J5
2
3
4
C3
C9
J2
C11
0
J1
RF
Output
0
C10
10 pF
RF
Input
C2
1.8 pF
L2
2.2 nH
Backside
Paddle
3.3 pF
22 pF
Notes:
1. See PC Board Layout, page 20 for more information.
2. Vref J4 turret can be used as control voltage for device power down (low = RF off) by setting R8 = 0 ꢀ and R8 = no connect.
3. The primary RF microstrip characteristic line impedance is 50 ꢀ.
4. Do not exceed +5.5V on Vpd or Vcc or TVS diode D3 will be damaged.
5. Components shown on the silkscreen but not on the schematic are not used.
6. The edge of L2 is placed against the edge of C9.
7. The edge of C9 is placed at 75 mils from the edge of AH225 RFin pin pad (6° at 1490 MHz).
8. The edge of C2 is placed at 300 mils from the edge of AH225 RFout pin pad (24° at 1490 MHz).
9. Zero ohm jumpers may be replaced with copper traces in the target application layout.
10. DNP means Do Not Place.
11. Inductor L3 on Vpd line is critical for linearity performance.
12. The locations of C11, R2, C10 and C3 are non-critical. They can be placed closer to the device.
13. Ferrite Bead FB1 eliminates bypass line resonances between C15 and C1. Steward MI0603K300R-10.
14. All components are of 0603 size unless stated otherwise.
Typical Performance 1475-1510 MHz
Frequency
Gain
MHz
dB
dB
1475
17
1490
17
1510
17
Input Return Loss
Output Return Loss
Output P1dB
17.5
10
17.2
11
15.2
13
dB
dBm
dBm
dBm
dBm
V
+31.4
+47.6
+22
+31.3
+48
+22
+23.9
+5
+31
Output IP3 at 19 dBm/tone, ∆f = 1 MHz
WCDMA Channel Power at -50 dBc ACLR [1]
OFDMA Channel Power at 2.5% EVM [2]
Supply Voltage, Vcc
+47
+21.8
+23.7
+23.9
Quiescent Collector Current, Icq
mA
300
Notes:
1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.
2. EVM Test set-up: 802.16 – 2004 OFDMA, 64 QAM – ½, 1024 FFT, 20 symbols, 30 sub channels.
Data Sheet: Rev F 05/17/12
Disclaimer: Subject to change without notice
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