AGR19125E
125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics
(continued)
IMD, INTERMODULATION DISTORTION (dBc)
S
IMD3
-25
-35
IMD5
IMD7
-45
-55
100
1000
10000
100000
TONE SPACING (kHz)S
TEST CONDITIONS:
V
DD
= 28 V, F = 1960 MHz, I
DQ
= 1250 mA, P
OUT
= 125 W (PEP).
Figure 8. Two-Tone Intermodulation Products vs. Tone Spacing
44
43
DRAIN EFFICIENCY (%)S
5
0
EFFICIENCY
-5
-10
-15
-20
IMD3
-25
-30
26
27
28
29
30
-35
IMD3, INTERMODULATION
S
DISTORTION (dBc)S
42
41
40
39
38
37
36
24
25
V
DD
, DRAIN SUPPLY (V)S
TEST CONDITIONS:
F = 1960 MHz, I
DQ
= 1250 mA, P
OUT
= 125 W (PEP), 100 kHz TONE SPACING.
Figure 9. Two-Tone Intermodulation Distortion and Efficiency vs. Drain Supply