AGR19125E
125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics
0.0
Ð
>
W
A
V
EL
E
N
GTH
S
TOW
A
RD
0.0
0.49
0.48
±
180
170
U
CT
IN
D
90
0.3
0.5
0.7
1.0
1.2
1.4
1.6
3.0
0.1
0.4
0.6
0.8
0.9
1.8
2.0
0.2
4.0
5.0
20
D
L
OA
D
<
OW
A
R
7
HST
0.4
N
GT
-170
EL
E
V
WA
<Ð
-90
-160
0.49
0.1
)
/
Yo
(-jB
CE
AN
PT
CE
US
ES
f1
0.48
0 .6
-85
0
-15
-80
6
0.4
4
0. 0
V
TI
UC
0.3
-75
-70
44
0.
06
0.
-65
0.6
-60
1.6
0.7
1.4
0.8
0.9
1.0
1.2
5
-5
0
-5
5
-4
MHz (f )
1930 (f1)
1960 (f2)
1990 (f3)
Z
L
Ω
Z
S
Ω
(Complex
Source Impedance) (Complex Optimum Load Impedance)
4.22 – j6.13
1.63 – j1.42
4.02 – j5.80
1.60 – j1.19
3.91 – j5.55
1.74 – j1.18
GATE (2)
Z
S
DRAIN (1)
Z
L
SOURCE (3)
INPUT MATCH
DUT
OUTPUT MATCH
Figure 3. Series Equivalent Input and Output Impedances
F
3
0.
2
1
0.
1.8
0
-5
-25
0.
5
0
2.
8
3
0.3
0.1
7
-30
-60
0.3
0.1
4
6
-3
-70
5
0.35
0.15
0.36
0.14
-80
-4
0
0.37
0.13
0.4
0.2
-90
0.12
0.38
0.11
-100
0.39
CA
P
A
0.1
0.4
-110
CI
T
IVE
RE
A
0.0
CT
AN
0.4
9
1
-12
CE
CO
M
0
0.4
2
0.0
8
PO
N
EN
T
(-j
4
-1
4
0.
X/
0.4
0
-20
3.
O
),
Zo
5
5
0.0
0
0.6
f1
R
IN
D
-15
0.8
Z
S
4.0
1.
0
f3
5.0
Z
0
= 10
Ω
1.
0.2
0
-10
0.
8
10
Z
L
0.4
20
f3
0.2
50
Ð
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
10
50
0.
8
0.6
0.4
10
0.1
-1
20
0.25
0.26
0.24
0.27
0.23
0.25
0.24
0.26
0.23
0.27
REFL
ECTI
ON
COEFFI
CI
EN
T
I
N
D
EG
R
L
E
OF
EES
ANG
I
SSI
ON
COEFFI
CI
EN
T
I
N
TRA
N
SM
D
EGR
EES
L
E
OF
ANG
0.2
0.2
0.3
-4
0
50
-20
0.2
2
0.2
8
0. 2
9
0.2
1
-30
0.
19
0.
31
0.
07
30
0.
43