AGR19125E
125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: T
C
= 30 °C.
Table 4. dc Characteristics
Parameter
Drain-source Breakdown Voltage (V
GS
= 0, I
D
=
400
µA)
200
Gate-source Leakage Current (V
GS
= 5 V, V
DS
= 0 V)
Zero Gate Voltage Drain Leakage Current (V
DS
= 28 V, V
GS
= 0 V)
Forward Transconductance (V
DS
= 10 V, I
D
= 1 A)
Gate Threshold Voltage (V
DS
= 10 V, I
D
= 400 µA)
Gate Quiescent Voltage (V
DS
= 28 V, I
D
= 1200 mA)
Drain-source On-voltage (V
GS
= 10 V, I
D
= 1 A)
Table 5. RF Characteristics
Parameter
Dynamic Characteristics
Reverse Transfer Capacitance
(V
DS
= 28 V, V
GS
= 0, f = 1.0 MHz)
(This part is internally matched on both the input and output.)
Common-source Amplifier Power Gain*
Drain Efficiency*
Third-order Intermodulation Distortion*
(IMD3 measured over 1.2288 MHz BW @ f1 – 2.5 MHz
and f2 + 2.5 MHz)
Adjacent Channel Power Ratio*
(ACPR measured over BW of 30 kHz @ f1 – 0.885 MHz
and f2 + 0.885 MHz)
Input Return Loss*
Power Output, 1 dB Compression Point
(V
DD
= 28 V, f
C
= 1960.0 MHz)
C
RSS
—
3.0
—
pF
Symbol
Min
Typ
Max
U nit
Off Characteristics
Symbol
V
(BR)DSS
I
GSS
I
DSS
G
FS
Min
65
—
—
—
—
—
—
Typ
—
—
—
9
—
3.8
0.08
Max
—
4
200
12
—
4.8
—
—
Unit
Vdc
µAdc
µAdc
S
Vdc
Vdc
Vdc
On Characteristics
V
GS(TH)
V
GS(Q)
V
DS(ON)
Functional Tests
(in
Agere Systems Supplied Test Fixture)
(in
Supplied Test Fixture)
G
PS
η
IM3
14
—
—
15
24
—
—
dB
%
–34
–48
–10
125
—
dBc
dBc
dB
W
ACPR
IRL
P1dB
ψ
—
—
—
—
—
—
Output Mismatch Stress
(V
DD
= 28 V, P
OUT
= 125 W (CW), I
DQ
= 1250 mA, f
C
= 1960.0 MHz
VSWR = 10:1; [all phase angles])
No degradation in output power.
* IS-95 N-CDMA P/A = 9.72 dB at 0.01% CCDF, f1 = 1958.75 MHz, and f2 = 1961.25 MHz.
V
DD
= 28 Vdc, I
DQ
= 1250 mA, and P
OUT
= 24 W avg.
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
