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TMC6200 参数 Datasheet PDF下载

TMC6200图片预览
型号: TMC6200
PDF下载: 下载PDF文件 查看货源
内容描述: [Universal high voltage BLDC/PMSM/Servo MOSFET 3-halfbridge gate-driver with in line motor current sensing.]
分类和应用:
文件页数/大小: 44 页 / 1548 K
品牌: TRINAMIC [ TRINAMIC MOTION CONTROL GMBH & CO. KG. ]
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TMC6200 DATASHEET (Rev. 1.01 / 2018-NOV-15)  
33  
11.2 DC and Timing Characteristics  
DC characteristics contain the spread of values guaranteed within the specified supply voltage range  
unless otherwise specified. Typical values represent the average value of all parts measured at +25°C.  
Temperature variation also causes stray to some values. A device with typical values will not leave  
Min/Max range within the full temperature range.  
Power Supply Current  
DC-Characteristics  
VVS = VVSA = 24.0V  
Parameter  
Symbol Conditions  
Min  
Typ  
Max Unit  
Total supply current, driver  
disabled IVS + IVSA  
IS  
internal clock  
11  
15  
mA  
VSA supply current (VS and VSA IVSA  
separated)  
fCLK=24MHz / internal  
clock, driver disabled  
fCLK=24MHz  
8
6
mA  
mA  
µA  
Internal current consumption  
from 5V supply on VCC pin  
IO supply current (typ. at 5V)  
IVCC  
IVIO  
no load on outputs,  
inputs at VIO or GND  
Excludes pullup /  
15  
30  
pull-down resistors  
Motor Driver  
Parameter  
DC- and Timing-Characteristics  
VVS = 24.0V; Tj=50°C  
Symbol Conditions  
Min  
Typ  
Max Unit  
RDSON lowside off driver  
RDSON highside off driver  
Gate drive current low side  
MOSFET turning on at 2V VGS  
RONL  
RONH  
Gate off  
Gate off  
1.0  
1.3  
400  
800  
1200  
400  
800  
1200  
600  
1200  
1800  
600  
1200  
1800  
50  
1.6  
2.0  
ISLPON0  
ISLPON2  
ISLPON3  
ISLPON0  
ISLPON2  
ISLPON3  
ISLPOFF0  
ISLPOFF2  
ISLPOFF3  
ISLPOFF0  
ISLPOFF2  
ISLPOFFN3  
tBBM0  
DRIVESTRENGTH=0  
DRIVESTRENGTH=2  
DRIVESTRENGTH=3  
DRIVESTRENGTH=0  
DRIVESTRENGTH=2  
DRIVESTRENGTH=3  
DRIVESTRENGTH=0  
DRIVESTRENGTH=2  
DRIVESTRENGTH=3  
DRIVESTRENGTH=0  
DRIVESTRENGTH=2  
DRIVESTRENGTH=3  
Individual LS and HS  
signals (singleline=0)  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
ns  
Gate drive current high side  
MOSFET turning on at 2V VGS  
Gate drive current low side  
MOSFET turning off at 4V VGS  
Gate drive current high side  
MOSFET turning on at 4V VGS  
Minimum effective BBM time  
enforced in individual or  
singleline mode  
Reaction delay time LS/HS input tDLY  
signal change to start of gate  
driver output change  
30  
65  
70  
110  
10  
Individual LS and HS  
signals (singleline=0)  
85  
ns  
ns  
Matching difference of gate  
driver reaction delay times  
tDLYMATCH  
Individual LS and HS  
signals (singleline=0)  
www.trinamic.com  
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