TE
tmCH
T2316162A
CAPACITANCE
(Ta =25°C, Vcc =5V ±10 %)
Parameter
Symbol
Typ
Max
5
Unit
pF
Notes
Input Capacitance (address)
Input Capacitance (clocks)
Output Capacitance (data-in, data-out)
C
C
-
-
-
1
1
1
I1
I2
7
pF
C
10
pF
DQ
Note: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
AC ELECTRICAL CHARACTERISTICS (note 14)
(Ta =0 to 70°C, Vcc=5V ±10 %, Vss=0V)
(note 29)
Test Conditions
AC CHARACTERISTICS
PARAMETER
-45
-50
-60
SYM
UNIT Notes
MIN MAX MIN MAX MIN MAX
Read or Write Cycle Time
t
t
t
t
t
80
105
16
84
113
20
110
140
25
ns
RC
Read Write Cycle Time
ns
RWC
PC
EDO-Page-Mode Read or Write Cycle Time
EDO-Page-Mode Read-Write Cycle Time
ns 22
ns 22
46
58
70
PCM
RAC
45
11
11
50
13
13
60
15
15
ns
4
RAS
CAS
OE
Access Time From
Access Time From
Access Time From
t
t
ns 5,20
CAC
OAC
ns 13,20
Access Time From Column Address
Access Time From CAS Precharge
t
t
19
22
25
27
30
35
ns
AA
ns 20
ACP
t
t
t
t
t
t
t
t
t
45 10K 50 10K 60 10K
ns
RAS
RAS
Pulse Width
RAS
RASC
RSH
RP
45 100K 50 100K 60 100K ns
Pulse Width (EDO Page Mode)
11
28
6
13
30
8
15
ns 27
ns
RAS Hold Time
40
RAS
CAS
Precharge Time
Pulse Width
10K
34
10K 15 10K
ns 26
ns 19
ns 23
ns 7,18
ns 19
CAS
CSH
CP
40
5
40
6
60
10
CAS Hold Time
CAS
RAS
CAS
Precharge Time (EDO Page Mode)
10
5
12
5
37
28
20
5
45
30
CAS
RAS
to
to
Delay Time
RCD
CRP
Precharge Time
Row Address Setup Time
Row Address Hold Time
t
t
t
0
5
8
0
8
0
ns
ns
ASR
RAH
RAD
10
12
26
10
ns
8
RAS
to Column Address Delay Time
Column Address Setup Time
t
t
t
0
6
0
8
0
ns 18
ns 18
ns
ASC
CAH
AR
Column Address Hold Time
10
45
Column Address Hold Time (Reference to
35
38
RAS
)
t
19
23
30
ns
Column Address to RAS Lead Time
RAL
TM Technology Inc. reserves the right
to change products or specifications without notice.
P. 4
Publication Date:APR. 2002
Revision:E
TMT [ TAIWAN MEMORY TECHNOLOGY ]
