UCC28180
www.ti.com
SLUSBQ5A –NOVEMBER 2013–REVISED NOVEMBER 2013
ELECTRICAL CHARACTERISTICS (continued)
Unless otherwise noted, VCC=15Vdc, 0.1µF from VCC to GND, –40°C ≤ TJ = TA ≤ +125°C. All voltages are with respect to
GND. Currents are positive into and negative out of the specified terminal.
PARAMETER
TEST CONDITION
MIN
TYP
MAX
UNITS
Voltage Loop
VREF
Reference voltage
TA = 25°C
4.93
4.87
–40
–230
23
5.00
5.00
–56
–280
40
5.07
5.15
–70
V
V
–40°C ≤ TA ≤ +125°C
gmv
Transconductance gain without EDR
Transconductance gain under EDR
Maximum sink current under normal operation
Source current under soft start
Maximum current under EDR operation
VSENSE input bias current
µS
µS
µA
µA
µA
nA
V
gmv-EDR
–340
57
VSENSE = 5 V, VCOMP = 4 V
VSENSE = 4 V, VCOMP = 4 V
VSENSE = 4 V, VCOMP = 2.5 V
VSENSE = 5 V
–29
–40
–200
100
0.04
0.37
1.5
–52
–241
250
20
VCOMP voltage during OLP
VSENSE = 0.5 V, IVCOMP= 0.5 mA
VCOMP = 2 V, VCC = floating
IVCOMP = –100 µA, VSENSE = 4 V
VCOMP = 0 V
0.00
0.10
VCOMP rapid discharge current
VCOMP precharge voltage
mA
V
VPRECHARGE
IPRECHARGE
VCOMP precharge current
–1
mA
%VREF
VSENSE threshold, end-of-soft-start
Initial Start-up
98
Gate Driver
GATE current, peak, sinking(2)
GATE current, peak, sourcing(2)
GATE rise time
CGATE = 4.7 nF
2.0
–1.5
40
A
A
CGATE = 4.7 nF
CGATE = 4.7 nF, GATE = 2 V to 8 V
CGATE = 4.7 nF, GATE = 8 V to 2 V
IGATE = 0 A
8
8
60
40
ns
ns
V
GATE fall time
25
GATE low voltage, no load
GATE low voltage, sinking
GATE low voltage, sourcing
GATE low voltage, sinking, OFF
GATE low voltage, sinking, OFF
GATE high voltage
0.00
0.04
–0.04
0.20
0.8
0.01
0.06
–0.06
0.31
1.4
IGATE = 20 mA
V
IGATE = -20 mA
V
VCC = 5 V, IGATE = 5 mA
VCC = 5 V, IGATE = 20 mA
VCC = 20 V, CGATE = 4.7 nF
VCC = 12.2 V, CGATE = 4.7 nF
0.10
0.4
V
V
14.5
10.8
15.2
11.2
16.1
12
V
GATE high voltage
V
VCC = VCCOFF + 0.2 V,
CGATE = 4.7 nF
GATE high voltage
8.2
9.0
10.1
V
(2) Not production tested. Characterized by design
Copyright © 2013, Texas Instruments Incorporated
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