欢迎访问ic37.com |
会员登录 免费注册
发布采购

UCC27524DGNR 参数 Datasheet PDF下载

UCC27524DGNR图片预览
型号: UCC27524DGNR
PDF下载: 下载PDF文件 查看货源
内容描述: 双5 -A高速低侧栅极驱动器 [Dual 5-A High-Speed Low-Side Gate Driver]
分类和应用: 驱动器栅极栅极驱动
文件页数/大小: 41 页 / 1903 K
品牌: TI [ TEXAS INSTRUMENTS ]
 浏览型号UCC27524DGNR的Datasheet PDF文件第10页浏览型号UCC27524DGNR的Datasheet PDF文件第11页浏览型号UCC27524DGNR的Datasheet PDF文件第12页浏览型号UCC27524DGNR的Datasheet PDF文件第13页浏览型号UCC27524DGNR的Datasheet PDF文件第15页浏览型号UCC27524DGNR的Datasheet PDF文件第16页浏览型号UCC27524DGNR的Datasheet PDF文件第17页浏览型号UCC27524DGNR的Datasheet PDF文件第18页  
UCC27523, UCC27524, UCC27525, UCC27526  
SLUSAQ3F NOVEMBER 2011REVISED MAY 2013  
www.ti.com  
APPLICATION INFORMATION  
High-current gate-driver devices are required in switching power applications for a variety of reasons. In order to  
effect fast switching of power devices and reduce associated switching-power losses, a powerful gate-driver  
device employs between the PWM output of control devices and the gates of the power semiconductor devices.  
Further, gate-driver devices are indispensable when having the PWM controller device directly drive the gates of  
the switching devices is sometimes not feasible. With advent of digital power, this situation is often encountered  
because the PWM signal from the digital controller is often a 3.3-V logic signal which is not capable of effectively  
turning on a power switch. A level-shifting circuitry is needed to boost the 3.3-V signal to the gate-drive voltage  
(such as 12 V) in order to fully turn on the power device and minimize conduction losses. Traditional buffer-drive  
circuits based on NPN/PNP bipolar transistors in totem-pole arrangement, being emitter-follower configurations,  
prove inadequate with digital power because they lack level-shifting capability. Gate-driver devices effectively  
combine both the level-shifting and buffer-drive functions. Gate-driver devices also find other needs such as  
minimizing the effect of high-frequency switching noise by locating the high-current driver physically close to the  
power switch, driving gate-drive transformers and controlling floating power-device gates, reducing power  
dissipationx and thermal stress in controller devices by moving gate-charge power losses into the controller.  
Finally, emerging wide band-gap power-device technologies such as GaN based switches, which are capable of  
supporting very high switching frequency operation, are driving special requirements in terms of gate-drive  
capability. These requirements include operation at low VDD voltages (5 V or lower), low propagation delays,  
tight delay matching and availability in compact, low-inductance packages with good thermal capability. In  
summary gate-driver devices are an extremely important component in switching power combining benefits of  
high-performance, low-cost, component-count, board-space reduction and simplified system design.  
ENB  
UCC2752x  
ENA  
1
2
3
4
ENA  
ENB  
OUTA  
VDD  
8
7
6
5
INA  
INA  
V+  
GND  
INB  
GND  
INB  
OUTB  
GND  
GND  
UDG-11225  
Figure 27. UCC2752x Typical Application Diagram (x = 3, 4 Or 5)  
14  
Submit Documentation Feedback  
Copyright © 2011–2013, Texas Instruments Incorporated  
Product Folder Links: UCC27523, UCC27524, UCC27525, UCC27526  
 复制成功!