TPS61199
www.ti.com
SLVSAN3 –DECEMBER 2010
ELECTRICAL CHARACTERISTICS
VIN = 12V; TA = –40°C to +85°C, typical values are at TA = +25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
SUPPLY CURRENT
VIN
Input voltage range
8
30
7
V
V
VUVLO_VIN
VVIN_SYS
Under voltage lockout threshold
VIN hysteresis
VIN falling
6.5
VIN rising
300
mV
EN=high; PWM = low;
no switching, VIN=30V
Iq_VIN
Operating quiescent current into Vin
1.5
mA
ISD
Shutdown current
10
µA
V
VDD
Internal regulation voltage
Output current of VDD = 15mA
5.7
2.0
6.0
6.3
EN and PWM
VH
Logic high threshold on EN,PWM,
Logic Low threshold on EN,PWM,
Pull down resistor on EN, PWM
VIN = 8V to 30V
VIN = 8V to 30V
V
V
VL
0.8
RPD
400
800
1600
kΩ
CURRENT REGULATION
VISET
KISET
IFB
ISET pin voltage
1.204 1.229 1.253
1990
V
Current multiple IIFB(AVG)/Iset
Current accuracy to IIFB(AVG)
Current matching
IISET = 30µA; IFB = 450mV
IISET = 30µA; IFB = 450mV
IISET= 30µA; IFB = 450mV
IFB voltage = 30V; PWM = low
IFB = 450mV
-2%
2%
3%
45
(1)
IFB(BR)
IFBleak
IFB pin leakage current
10
65
25
80
µA
IIFB_max
Current sink max output current
mA
OSCILLATOR
R = 100 kΩ
R = 160 kΩ
0.64
0.4
0.8
0.5
0.96
0.6
FOSC
Switching frequency
MHz
V
VFSW
Dutymax
tskip
FSW pin reference voltage
1.229
94%
200
Maximum duty cycle
FSW= 500 kHz
90%
Minimum pulse width for skip cycle mode
ns
GATE DRIVER and OVER CURRENT LIMIT
RGDRV(SRC)
RGDRV(SNK)
VISNS
Gate driver impedance when sourcing
Gate driver impedance when sinking
Switch current limit detection threshold
VGDRV = 6V, IGDRV = 20mA
VGDRV = 6V, IGDRV = 20mA
VIN = 8V to 30V
2
1.5
Ω
Ω
120
160
180
mV
PROTECTION
VCLAMP
Output overvoltage threshold at OVP pin
2.95
0.25
V
LED short across protection bias current multiple
IFBP/IISET
IFBP
VFBP = 1V
0.23
26.5
0.27
29.5
VOVP_IFB
IFB overvoltage threshold
V
THERMAL SHUTDOWN
Tshutdown
Thermal shutdown threshold
150
°C
(1) Current matching = (IMAX – IMIN)/ IAVG
Copyright © 2010, Texas Instruments Incorporated
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