SLVS818 – APRIL 2008
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ELECTRICAL CHARACTERISTICS (continued)
T
J
= –55°C to 125°C, VIN = 3 V to 6 V (unless otherwise noted)
PARAMETER
OSCILLATOR
Internally set free-running frequency range
SYNC
≤
0.8 V, RT open
SYNC
≥
2.5 V, RT open
RT = 180 kΩ (1% resistor to AGND)
(4)
Externally set free-running frequency range
RT = 100 kΩ (1% resistor to AGND)
RT = 68 kΩ (1% resistor to AGND)
High-level threshold voltage, SYNC
Low-level threshold voltage, SYNC
Pulse duration, SYNC
Ramp valley
(4)
Ramp amplitude (peak-to-peak)
Minimum controllable on time
Maximum duty cycle
ERROR AMPLIFIER
Error amplifier open loop voltage gain
Error amplifier unity gain bandwidth
Error amplifier common-mode input voltage range
I
IB
V
O
Input bias current, VSENSE
Output voltage slew rate (symmetric), COMP
1 kΩ COMP to AGND
(5)
Parallel 10 kΩ, 160 pF COMP to AGND
Powered by internal LDO
VSENSE = V
ref
(5)
(5)
(4)
(5)
TEST CONDITIONS
MIN
TYP
MAX
UNIT
255
400
245
450
650
2.5
350
550
280
500
700
450
700
313
550
775
kHz
kHz
V
0.8
V
50
330
0.75
1
200
90%
700
kHz
V
V
ns
Frequency range, SYNC
(5)
90
3
0
110
5
VBIAS
60
1.4
250
dB
MHz
V
nA
V/µs
PWM COMPARATOR
PWM comparator propagation delay time, PWM
comparator input to PH pin (excluding dead time)
SLOW-START/ENABLE
Enable threshold voltage, SS/ENA
Enable hysteresis voltage, SS/ENA
Falling edge deglitch, SS/ENA
Internal slow-start time
Charge current, SS/ENA
Discharge current, SS/ENA
POWER GOOD
Power good threshold voltage
Power good hysteresis voltage
(4)
(4)
(4)
10 mV overdrive
(5)
70
85
ns
0.82
1.20
0.03
2.5
1.45
V
V
µs
2.2
SS/ENA = 0 V
SS/ENA = 0.2 V, V
I
= 2.7 V
VSENSE falling
2.5
1.2
3.35
5
2.3
4.1
8
4
ms
µA
mA
90
3
35
%V
ref
%V
ref
µs
0.30
1
V
µA
Power good falling edge deglitch
(4)
Output saturation voltage, PWRGD
Leakage current, PWRGD
CURRENT LIMIT
Current limit trip point
Current limit leading edge blanking time
(4)
Current limit total response time
THERMAL SHUTDOWN
Thermal shutdown trip point
(4)
Thermal shutdown hysteresis
OUTPUT POWER MOSFETS
r
DS(on)
Power MOSFET switches
I
O
= 0.5 A, VI = 6 V
(6)
I
O
= 0.5 A, VI = 3 V
(6)
(4)
(4)
I
(sink)
= 2.5 mA
V
I
= 5.0 V
V
I
= 3 V, output shorted
(5)
V
I
= 6 V, output shorted
(5)
0.18
4
4.5
6.5
7.5
100
200
A
ns
ns
°C
°C
88
136
135
150
10
165
59
85
mΩ
(4)
(5)
(6)
Specified by design
Specified by design for T
J
= -40°C to 125°C
Matched MOSFETs, low side r
DS(on)
production tested, high side r
DS(on)
specified by design.
4
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