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TPS2149IDGN 参数 Datasheet PDF下载

TPS2149IDGN图片预览
型号: TPS2149IDGN
PDF下载: 下载PDF文件 查看货源
内容描述: 3.3 -V LDO和双开关, USB总线供电集线器电源管理 [3.3-V LDO AND DUAL SWITCH FOR USB BUS-POWERED HUB POWER MANAGEMENT]
分类和应用: 线性稳压器IC调节器电源电路开关光电二极管输出元件
文件页数/大小: 19 页 / 270 K
品牌: TI [ TEXAS INSTRUMENTS ]
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TPS2149  
TPS2159  
SLVS401 AUGUST 2001  
electrical characteristics over recommended operating junction-temperature range,  
2.9 V V  
5.5 V, T = 40°C to 100°C (unless otherwise noted)  
I(VIN)  
J
timing parameters, power switches  
PARAMETER  
TEST CONDITIONS  
MIN  
0.5  
TYP  
MAX  
6
UNIT  
C
C
C
C
C
C
C
C
= 100 µF  
= 1 µF  
L
L
L
L
L
L
L
L
t
t
t
t
Turnon time, OUTx switch, (see Note 1)  
Turnoff time, OUTx switch (see Note 1)  
Rise time, OUTx switch (see Note 1)  
Fall time, OUTx switch (see Note 1)  
R
R
R
R
= 33 Ω  
= 33 Ω  
= 33 Ω  
= 33 Ω  
on  
off  
r
L
L
L
L
0.1  
3
= 100 µF  
= 1 µF  
5.5  
10  
2
ms  
0.05  
0.5  
= 100 µF  
= 1 µF  
5
0.1  
2
= 100 µF  
= 1 µF  
5.5  
9
f
0.05  
1.2  
NOTE 1. Specified by design, not tested in production.  
undervoltage lockout at VIN  
PARAMETER  
UVLO Threshold  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
V
2.2  
2.85  
Hysteresis (see Note 1)  
260  
mV  
µs  
Deglitch (see Note 1)  
50  
NOTE 1. Specified by design, not tested in production.  
electrical characteristics over recommended operating junction-temperature range,  
2.9 V V  
(unless otherwise noted)  
5.5 V, V  
= 0 V, V  
= 5 V, C  
= 10 µF, T = 40°C to 100°C  
I(VIN)  
I(ENx)  
I(LDO_EN)  
L(LDO_OUT) J  
3.3 V LDO  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
V
= 4.25 V to 5.25 V,  
I(VIN)  
V
O
Output voltage, dc  
Dropout voltage  
3.20  
3.3  
3.40  
V
I
= 0.5 mA to 200 mA  
O(LDO_OUT)  
V
= 3.2 V, I  
= 150 mA,  
I(VIN)  
O(OUT1)  
= 200 mA  
0.35  
V
I
O(LDO_OUT)  
Line regulation voltage (see Note 1)  
Load regulation voltage (see Note 1)  
Short-circuit current limit  
V
V
V
V
V
= 4.25 V to 5.25 V, I  
= 5 mA  
0.1  
1%  
%/V  
I(VIN)  
O(LDO_OUT)  
= 5 mA to 200 mA  
= 4.25 V, I  
O(LDO_OUT)  
= 4.25 V, LDO_OUT connected to GND  
0.4  
0.33  
10  
I(VIN)  
I
I
0.275  
0.55  
A
OS  
I(VIN)  
= 3.3 V, V  
= 5.5 V, V  
= 0 V  
= 0 V  
µA  
µA  
Reverse leakage current into  
LDO_OUT  
O(LDO_OUT)  
O(LDO_OUT)  
I(IN)  
I(IN)  
lkg(R)  
10  
f = 1 kHz, C  
L(LDO_OUT)  
= 4.7 µF, ESR = 0.25 ,  
= 5 mA, V = 100 mV  
Power supply rejection  
50  
dB  
ms  
I
O
INpp  
V
R
ramping up from 10% to 90% in 0.1 ms,  
IN  
= 16 , C  
Ramp-up time, LDO_OUT (0% to 90%)  
0.1  
1
= 10 µF  
L(LDO_OUT)  
L
Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.  
NOTES: 1. Specified by design, not tested in production.  
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