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TPIC6B595N 参数 Datasheet PDF下载

TPIC6B595N图片预览
型号: TPIC6B595N
PDF下载: 下载PDF文件 查看货源
内容描述: 功率逻辑8位移位寄存器 [POWER LOGIC 8-BIT SHIFT REGISTER]
分类和应用: 外围驱动器移位寄存器驱动程序和接口接口集成电路光电二极管PC
文件页数/大小: 10 页 / 148 K
品牌: TI [ TEXAS INSTRUMENTS ]
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TPIC6B595  
POWER LOGIC 8-BIT SHIFT REGISTER  
SLIS032 – JULY 1995  
schematic of inputs and outputs  
EQUIVALENT OF EACH INPUT  
TYPICAL OF ALL DRAIN OUTPUTS  
V
CC  
DRAIN  
50 V  
Input  
25 V  
20 V  
12 V  
GND  
GND  
absolute maximum ratings over recommended operating case temperature range (unless  
otherwise noted)  
Logic supply voltage, V  
(see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V  
CC  
Logic input voltage range, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3 V to 7 V  
Power DMOS drain-to-source voltage, V  
I
(see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V  
DS  
Continuous source-to-drain diode anode current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA  
Pulsed source-to-drain diode anode current (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 A  
Pulsed drain current, each output, all outputs on, I , T = 25°C (see Note 3) . . . . . . . . . . . . . . . . . . . 500 mA  
D
C
Continuous drain current, each output, all outputs on, I , T = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 mA  
D
C
Peak drain current single output, I ,T = 25°C (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA  
DM  
C
Single-pulse avalanche energy, E (see Figure 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mJ  
AS  
Avalanche current, I (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA  
AS  
Continuous total dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table  
Operating virtual junction temperature range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40°C to 150°C  
J
Operating case temperature range, T  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40°C to 125°C  
C
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65°C to 150°C  
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C  
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and  
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not  
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
NOTES: 1. All voltage values are with respect to GND.  
2. Each power DMOS source is internally connected to GND.  
3. Pulse duration 100 µs and duty cycle 2%.  
4. DRAIN supply voltage = 15 V, starting junction temperature (T ) = 25°C, L = 200 mH, I  
= 0.5 A (see Figure 4).  
AS  
JS  
DISSIPATION RATING TABLE  
T
25°C  
DERATING FACTOR  
T = 125°C  
C
POWER RATING  
C
PACKAGE  
POWER RATING  
ABOVE T = 25°C  
C
DW  
N
1389 mW  
11.1 mW/°C  
10.5 mW/°C  
278 mW  
1050 mW  
263 mW  
3
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
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