TAS5614LA
SLAS846 –MAY 2012
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ELECTRICAL CHARACTERISTICS (continued)
PVDD_X = 36 V, GVDD_X = 12 V, VDD = 12 V, TC (Case temperature) = 75°C, fS = 384 kHz, unless otherwise specified.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
(1)
OTE-OTWdifferential
OTE-OTW differential
30
°C
A device reset is needed to clear
FAULT after an OTE event
(1)
OTEHYST
25
2.6
15
°C
ms
A
OLPC
IOC
Overload protection counter
Overcurrent limit protection
fPWM = 384 kHz
Resistor – programmable, nominal peak current in
1Ω load, ROC = 24 kΩ
Resistor – programmable, nominal peak current in
1Ω load, ROC = 62 kΩ
IOC_LATCHED
IOCT
Overcurrent limit protection, latched
Overcurrent response time
15
150
3
A
Time from application of short condition to Hi-Z of
affected half bridge
ns
Internal pulldown resistor at output of
each half bridge
Connected when RESET is active to provide
bootstrap charge. Not used in SE mode.
IPD
mA
STATIC DIGITAL SPECIFICATIONS
VIH
High level input voltage
1.9
V
V
INPUT_X, M1, M2, M3, RESET
VIL
Low level input voltage
Input leakage current
0.8
LEAKAGE
100
μA
OTW / SHUTDOWN (FAULT)
Internal pullup resistance, OTW, CLIP,
FAULT to DVDD
RINT_PU
20
3
26
33
kΩ
VOH
High level output voltage
Low level output voltage
Device fanout OTW, FAULT, CLIP
Internal pullup resistor
IO = 4mA
3.3
200
30
3.6
V
VOL
500
mV
FANOUT
No external pullup
devices
10
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