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OPA2140AIDGKR 参数 Datasheet PDF下载

OPA2140AIDGKR图片预览
型号: OPA2140AIDGKR
PDF下载: 下载PDF文件 查看货源
内容描述: 高精度,低噪声,轨到轨输出11MHz JFET运算放大器 [High-Precision, Low-Noise, Rail-to-Rail Output 11MHz JFET Op Amp]
分类和应用: 运算放大器
文件页数/大小: 25 页 / 806 K
品牌: TI [ TEXAS INSTRUMENTS ]
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OPA140  
OPA2140, OPA4140  
SBOS498A JULY 2010REVISED AUGUST 2010  
www.ti.com  
particular semiconductor fabrication process and  
specific circuits connected to the pin. Additionally,  
internal electrostatic discharge (ESD) protection is  
built into these circuits to protect them from  
accidental ESD events both before and during  
product assembly.  
MAXIMUM SUPPLY VOLTAGE  
(Quiescent Condition)  
20  
18  
16  
14  
12  
10  
8
It is helpful to have a good understanding of this  
basic ESD circuitry and its relevance to an electrical  
overstress event. See Figure 38 for an illustration of  
the ESD circuits contained in the OPAx140 series  
(indicated by the dashed line area). The ESD  
protection circuitry involves several current-steering  
diodes connected from the input and output pins and  
routed back to the internal power-supply lines, where  
they meet at an absorption device internal to the  
operational amplifier. This protection circuitry is  
intended to remain inactive during normal circuit  
operation.  
6
TSSOP Quad  
SOIC Quad  
MSOP Dual  
SOIC Dual  
4
2
0
80  
90  
100  
110  
120  
130  
140  
150  
160  
Ambient Temperature (?C)  
Figure 36. Maximum Supply Voltage vs  
Temperature (OPA2140 and OPA4140), Quiescent  
Condition  
An ESD event produces  
a
short duration,  
high-voltage pulse that is transformed into a short  
duration, high-current pulse as it discharges through  
a semiconductor device. The ESD protection circuits  
are designed to provide a current path around the  
operational amplifier core to prevent it from being  
damaged. The energy absorbed by the protection  
circuitry is then dissipated as heat.  
MAXIMUM SUPPLY VOLTAGE  
(Maximum DC Load on All Channels)  
20  
18  
16  
14  
12  
10  
8
When an ESD voltage develops across two or more  
of the amplifier device pins, current flows through one  
or more of the steering diodes. Depending on the  
path that the current takes, the absorption device  
may activate. The absorption device has a trigger, or  
threshold voltage, that is above the normal operating  
voltage of the OPAx140 but below the device  
breakdown voltage level. Once this threshold is  
exceeded, the absorption device quickly activates  
and clamps the voltage across the supply rails to a  
safe level.  
6
TSSOP Quad  
SOIC Quad  
MSOP Dual  
SOIC Dual  
4
2
0
80  
90  
100  
110  
120  
130  
140  
150  
160  
Ambient Temperature (?C)  
When the operational amplifier connects into a circuit  
such as the one Figure 38 shows, the ESD protection  
components are intended to remain inactive and not  
become involved in the application circuit operation.  
However, circumstances may arise where an applied  
voltage exceeds the operating voltage range of a  
given pin. Should this condition occur, there is a risk  
that some of the internal ESD protection circuits may  
be biased on, and conduct current. Any such current  
flow occurs through steering diode paths and rarely  
involves the absorption device.  
Figure 37. Maximum Supply Voltage vs  
Temperature (OPA2140 and OPA4140), Maximum  
DC Load  
ELECTRICAL OVERSTRESS  
Designers often ask questions about the capability of  
an operational amplifier to withstand electrical  
overstress. These questions tend to focus on the  
device inputs, but may involve the supply voltage pins  
or even the output pin. Each of these different pin  
functions have electrical stress limits determined by  
the voltage breakdown characteristics of the  
16  
Copyright © 2010, Texas Instruments Incorporated  
Product Folder Link(s): OPA140 OPA2140 OPA4140  
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