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LM5113 参数 Datasheet PDF下载

LM5113图片预览
型号: LM5113
PDF下载: 下载PDF文件 查看货源
内容描述: 5A , 100V半桥栅极驱动器的增强型GaN FET的 [5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs]
分类和应用: 驱动器栅极栅极驱动
文件页数/大小: 15 页 / 1866 K
品牌: TI [ TEXAS INSTRUMENTS ]
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Storage Temperature Range  
ESD Rating HBM  
−55°C to +150°C  
2 kV  
Absolute Maximum Ratings (Note 2)  
VDD to VSS  
−0.3V to 7V  
Recommended Operating  
HB to HS  
−0.3V to 7V  
−0.3V to 15V  
−0.3V to VDD +0.3V  
VHS −0.3V to VHB +0.3V  
−5V to +100V  
LI or HI Input  
LOH, LOL Output  
HOH, HOL Output  
HS to VSS  
Conditions  
VDD  
LI or HI Input  
HS  
+4.5V to +5.5V  
0V to +14V  
−5V to 100V  
HB  
VHS +4V to VHS +5.5V  
<50 V/ns  
HB to VSS  
HB to VDD  
Junction Temperature  
0 to 107V  
0 to 100V  
+150°C  
HS Slew Rate  
Junction Temperature  
−40°C to +125°C  
Electrical Characteristics  
Limits in standard type are for TJ = 25°C only; limits in boldface type apply over the junction temperature (TJ) range of -40°C to  
+125°C. Minimum and Maximum limits are guaranteed through test, design, or statistical correlation. Typical values represent the  
most likely parametric norm at TJ = 25°C, and are provided for reference purposes only. Unless otherwise specified, VDD = VHB  
=
5V, VSS = VHS = 0V, No Load on LOL and HOL or HOH and HOL (Note 3).  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Units  
SUPPLY CURRENTS  
IDD  
VDD Quiescent Current  
VDD Operating Current  
LI = HI = 0V  
0.07  
2.0  
0.1  
3.0  
0.1  
2.5  
8
mA  
mA  
mA  
mA  
µA  
IDDO  
IHB  
f = 500 kHz  
Total HB Quiescent Current  
Total HB Operating Current  
HB to VSS Current, Quiescent  
HB to VSS Current, Operating  
LI = HI = 0V  
f = 500 kHz  
0.08  
1.5  
IHBO  
IHBS  
IHBSO  
HS = HB = 100V  
f = 500 kHz  
0.1  
0.4  
1.0  
mA  
INPUT PINS  
VIR  
VIF  
Input Voltage Threshold  
Rising Edge  
Falling Edge  
1.89  
1.48  
2.06  
1.66  
400  
200  
2.18  
1.76  
V
V
Input Voltage Threshold  
Input Voltage Hysteresis  
Input Pulldown Resistance  
VIHYS  
RI  
mV  
kΩ  
100  
3.2  
2.5  
300  
4.5  
3.9  
UNDER VOLTAGE PROTECTION  
VDDR  
VDDH  
VHBR  
VHBH  
VDD Rising Threshold  
VDD Threshold Hysteresis  
HB Rising Threshold  
3.8  
0.2  
3.2  
0.2  
V
V
V
V
HB Threshold Hysteresis  
BOOTSTRAP DIODE  
VDL  
VDH  
RD  
Low-Current Forward Voltage  
IVDD-HB = 100 µA  
IVDD-HB = 100 mA  
IVDD-HB = 100 mA  
Regulation Voltage  
0.45  
0.90  
1.85  
5.2  
0.65  
1.00  
3.60  
5.45  
V
V
High-Current Forward Voltage  
Dynamic Resistance  
HB-HS Clamp  
V
4.7  
LOW & HIGH SIDE GATE DRIVER  
VOL  
VOH  
Low-Level Output Voltage  
IHOL = ILOL = 100 mA  
IHOH = ILOH = 100 mA  
0.06  
0.21  
0.10  
0.31  
V
V
High-Level Output Voltage  
VOH = VDD – LOH or VOH = HB – HOH  
IOHL  
Peak Source Current  
HOH, LOH = 0V  
HOL, LOL = 5V  
HOH, LOH = 0V  
HOL, LOL = 5V  
A
A
1.2  
5
IOLL  
Peak Sink Current  
IOHLK  
IOLLK  
High-Level Output Leakage Current  
Low-Level Output Leakage Current  
µA  
µA  
1.5  
1.5  
THERMAL RESISTANCE  
Junction to Ambient (Note 4)  
LLP-10  
40  
80  
°C/W  
°C/W  
θJA  
12-bump micro SMD  
www.ti.com  
4
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