DRV8300-Q1
ZHCSPF5 –APRIL 2022
www.ti.com.cn
4.8 V ≤VGVDD ≤20 V, –40°C ≤TJ ≤150°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
400
850
TYP
750
MAX
1200
2100
UNIT
mA
IDRIVEP_LS
IDRIVEN_LS
Low-side peak source gate current
Low-side peak sink gate current
GLx = 12V
GLx = 0V
1500
mA
INHx, INLx to GHx, GLx; VGVDD = VBSTx
VSHx > 8V; SHx = 0V, No load on GHx
and GLx
-
tPD
Input to output propagation delay
70
125
±4
180
30
ns
ns
GHx turning OFF to GLx turning ON, GLx
turning OFF to GHx turning ON; VGVDD
Matching propagation delay per
phase
=
tPD_match
-30
VBSTx - VSHx > 8V; SHx = 0V, No load on
GHx and GLx
GHx/GLx turning ON to GHy/GLy turning
Matching propagation delay phase to ON, GHx/GLx turning OFF to GHy/GLy
tPD_match
-30
±4
30
ns
phase
turning OFF; VGVDD = VBSTx - VSHx
>
8V; SHx = 0V, No load on GHx and GLx
CLOAD = 1000 pF; VGVDD = VBSTx
VSHx > 8V; SHx = 0V
-
-
tR_GLx
tR_GHx
tF_GLx
GLx rise time (10% to 90%)
GHx rise time (10% to 90%)
GLx fall time (90% to 10%)
10
10
5
24
24
12
50
50
30
ns
ns
ns
CLOAD = 1000 pF; VGVDD = VBSTx
VSHx > 8V; SHx = 0V
CLOAD = 1000 pF; VGVDD = VBSTx - VSHx
8V; SHx = 0V
>
>
CLOAD = 1000 pF; VGVDD = VBSTx - VSHx
8V; SHx = 0V
tF_GHx
tDEAD
GHx fall time (90% to 10%)
Gate drive dead time
5
12
30
ns
ns
150
215
280
Minimum input pulse width on INHx,
INLx that changes the output on
GHx, GLx
tPW_MIN
40
70
150
ns
BOOTSTRAP DIODES (DRV8300D, DRV8300DI)
IBOOT = 100 µA
IBOOT = 100 mA
0.45
2
0.7
2.3
0.85
3.1
V
V
VBOOTD
Bootstrap diode forward voltage
Bootstrap dynamic resistance
RBOOTD
IBOOT = 100 mA and 80 mA
11
15
25
Ω
(ΔVBOOTD/ΔIBOOT
PROTECTION CIRCUITS
)
Supply rising
4.45
4.2
4.6
4.35
280
4.7
4.4
V
V
Gate Driver Supply undervoltage
lockout (GVDDUV)
VGVDDUV
Supply falling
VGVDDUV_HYS Gate Driver Supply UV hysteresis
Rising to falling threshold
250
310
mV
Gate Driver Supply undervoltage
deglitch time
tGVDDUV
5
3.6
3.5
10
4.2
4
13
4.8
4.5
µs
V
Boot Strap undervoltage lockout
Supply rising
(VBSTx - VSHx
Boot Strap undervoltage lockout
(VBSTx - VSHx
)
VBSTUV
Supply falling
V
)
VBSTUV_HYS
tBSTUV
Bootstrap UV hysteresis
Rising to falling threshold
200
10
mV
µs
Bootstrap undervoltage deglitch time
6
22
7.6 Timing Diagrams
INHx/INLx
GHx/GLx
50%
50%
tPD
tPD
图7-1. Propagation Delay(tPD
)
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