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DRV8300DPWRQ1 参数 Datasheet PDF下载

DRV8300DPWRQ1图片预览
型号: DRV8300DPWRQ1
PDF下载: 下载PDF文件 查看货源
内容描述: [具有自举二极管的汽车类 100V(最大值)简单三相栅极驱动器 | PW | 20 | -40 to 125]
分类和应用: 栅极驱动二极管驱动器
文件页数/大小: 26 页 / 1519 K
品牌: TI [ TEXAS INSTRUMENTS ]
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DRV8300-Q1  
ZHCSPF5 APRIL 2022  
www.ti.com.cn  
7 Specifications  
7.1 Absolute Maximum Ratings  
over operating temperature range (unless otherwise noted)(1)  
MIN  
-0.3  
-0.3  
-0.3  
-0.3  
-22  
MAX UNIT  
Gate driver regulator pin voltage  
Bootstrap pin voltage  
GVDD  
21.5  
115  
V
V
BSTx  
Bootstrap pin voltage  
BSTx with respect to SHx  
21.5  
V
Logic pin voltage  
INHx, INLx  
VGVDD+0.3  
115  
V
High-side gate drive pin voltage  
High-side gate drive pin voltage  
Transient 500-ns high-side gate drive pin voltage  
Low-side gate drive pin voltage  
Transient 500-ns low-side gate drive pin voltage  
High-side source pin voltage  
Ambient temperature, TA  
GHx  
V
GHx with respect to SHx  
-0.3  
-5  
22  
V
GHx with respect to SHx  
22  
V
GLx  
GLx  
SHx  
-0.3  
-5  
VGVDD+0.3  
VGVDD+0.3  
100  
V
V
-22  
V
125  
°C  
°C  
°C  
40  
40  
65  
Junction temperature, TJ  
150  
Storage temperature, Tstg  
150  
(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply  
functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If  
used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully  
functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime  
7.2 ESD Ratings AUTO  
VALUE  
UNIT  
Human body model (HBM), per AEC Q100-002(1)  
HBM ESD Classification Level 2  
±2000  
Electrostatic  
discharge  
V(ESD)  
V
Corner pins  
Other pins  
±750  
±750  
Charged device model (CDM), per AEC Q100-011  
CDM ESD Classification Level C4B  
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.  
7.3 Recommended Operating Conditions  
over operating temperature range (unless otherwise noted)  
MIN  
5
NOM  
MAX UNIT  
VGVDD  
VSHx  
Power supply voltage  
GVDD  
SHx  
20  
85  
V
V
High-side source pin voltage  
-2  
Transient 2µs high-side source pin  
voltage  
VSHx  
SHx  
-22  
85  
V
VBST  
VBST  
VIN  
Bootstrap pin voltage  
BSTx  
5
5
0
0
105  
20  
V
V
Bootstrap pin voltage  
BSTx with respect to SHx  
INHx, INLx, MODE, DT  
INHx, INLx  
Logic input voltage  
GVDD  
200  
2
V
fPWM  
VSHSL  
CBOOT  
TA  
PWM frequency  
kHz  
V/ns  
µF  
°C  
°C  
Slew rate on SHx pin  
(1)  
Capacitor between BSTx and SHx  
Operating ambient temperature  
Operating junction temperature  
1
125  
150  
40  
40  
TJ  
(1) Current flowing through boot diode (DBOOT) needs to be limited for CBOOT > 1µF  
Copyright © 2022 Texas Instruments Incorporated  
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Product Folder Links: DRV8300-Q1  
 
 
 
 
 
 
 
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