CSD18511KCS
www.ti.com.cn
ZHCSGJ9 –JULY 2017
Typical MOSFET Characteristics (continued)
TA = 25°C (unless otherwise stated)
10000
1000
100
10
9
8
7
6
5
4
3
2
1
0
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
0
10
20
30
40
0
10
20
30
40
50
60
70
VDS - Drain-to-Source Voltage (V)
Qg - Gate Charge (nC)
D005
D004
VDS = 20 V
ID = 100 A
Figure 5. Capacitance
Figure 4. Gate Charge
10
9
8
7
6
5
4
3
2
1
2.6
TC = 25°C, I D = 100 A
TC = 125°C, I D = 100 A
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0
0
2
4
6
8
10
12
14
16
18
20
-75 -50 -25
0
25 50 75 100 125 150 175 200
VGS - Gate-to-Source Voltage (V)
TC - Case Temperature (èC)
D007
D006
ID = 250 µA
Figure 7. On-State Resistance vs Gate-to-Source Voltage
Figure 6. Threshold Voltage vs Temperature
100
2.2
2
TC = 25èC
TC = 125èC
VGS = 4.5 V
VGS = 10 V
10
1.8
1.6
1.4
1.2
1
1
0.1
0.01
0.8
0.6
0.4
0.001
0.0001
-75 -50 -25
0
25 50 75 100 125 150 175 200
0
0.2
0.4
0.6
0.8
1
TC - Case Temperature (°C)
VSD - Source-to-Drain Voltage (V)
D008
D009
ID = 100 A
Figure 8. Normalized On-State Resistance vs Temperature
Figure 9. Typical Diode Forward Voltage
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