CSD18511KCS
ZHCSGJ9 –JULY 2017
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Typical MOSFET Characteristics (continued)
TA = 25°C (unless otherwise stated)
1000
100
10
1
100
10
1
DC
10 ms
1 ms
100 µs
10 µs
TC = 25è C
TC = 125è C
0.1
0.1
1
10
100
0.01
0.1
TAV - Time in Avalanche (ms)
1
VDS - Drain-to-Source Voltage (V)
D010
D011
Single pulse, max RθJC = 0.8°C/W
Figure 10. Maximum Safe Operating Area
Figure 11. Single Pulse Unclamped Inductive Switching
150
125
100
75
50
25
0
-50 -25
0
25
50
75 100 125 150 175 200
TC - Case Temperature (èC)
D012
Max RθJC = 0.8°C/W
Figure 12. Maximum Drain Current vs Temperature
6
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