CSD18511KCS
www.ti.com.cn
ZHCSGJ9 –JULY 2017
5 Specifications
5.1 Electrical Characteristics
TA = 25°C (unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
STATIC CHARACTERISTICS
BVDSS
IDSS
Drain-to-source voltage
VGS = 0 V, ID = 250 μA
40
V
Drain-to-source leakage current
Gate-to-source leakage current
Gate-to-source threshold voltage
VGS = 0 V, VDS = 32 V
VDS = 0 V, VGS = 20 V
VDS = VGS, ID = 250 μA
VGS = 4.5 V, ID = 100 A
VGS = 10 V, ID = 100 A
VDS = 4 V, ID = 100 A
1
100
2.4
4.2
2.6
μA
nA
V
IGSS
VGS(th)
1.5
1.8
3.2
2.1
249
RDS(on)
gfs
Drain-to-source on-resistance
Transconductance
mΩ
S
DYNAMIC CHARACTERISTICS
Ciss
Coss
Crss
RG
Input capacitance
4570
454
235
0.9
31
5940
591
306
1.8
pF
pF
pF
Ω
Output capacitance
Reverse transfer capacitance
Series gate resistance
Gate charge total (4.5 V)
Gate charge total (10 V)
Gate charge gate-to-drain
Gate charge gate-to-source
Gate charge at Vth
Output charge
VGS = 0 V, VDS = 20 V, ƒ = 1 MHz
Qg
nC
nC
nC
nC
nC
nC
ns
ns
ns
ns
Qg
64
Qgd
Qgs
Qg(th)
Qoss
td(on)
tr
VDS = 20 V, ID = 100 A
VDS = 20 V, VGS = 0 V
9.7
17.9
7.4
20.7
8
Turnon delay time
Rise time
6
VDS = 20 V, VGS = 10 V,
IDS = 100 A, RG = 0 Ω
td(off)
tf
Turnoff delay time
Fall time
17
3
DIODE CHARACTERISTICS
VSD
Qrr
trr
Diode forward voltage
Reverse recovery charge
Reverse recovery time
ISD = 100 A, VGS = 0 V
0.9
62
31
1.0
V
nC
ns
VDS= 20 V, IF = 100 A,
di/dt = 300 A/μs
5.2 Thermal Information
TA = 25°C (unless otherwise stated)
THERMAL METRIC
Junction-to-case thermal resistance
Junction-to-ambient thermal resistance
MIN
TYP
MAX
UNIT
°C/W
°C/W
RθJC
RθJA
0.8
62
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3
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