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CC1110F32RHHR 参数 Datasheet PDF下载

CC1110F32RHHR图片预览
型号: CC1110F32RHHR
PDF下载: 下载PDF文件 查看货源
内容描述: 低功耗的SoC (系统级芯片)与MCU,存储器,低于1GHz的射频收发器和USB控制器 [Low-Power SoC (System-on-Chip) with MCU, Memory, Sub-1 GHz RF Transceiver, and USB Controller]
分类和应用: 存储射频控制器
文件页数/大小: 249 页 / 3133 K
品牌: TI [ TEXAS INSTRUMENTS ]
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CC1110Fx / CC1111Fx  
3
Absolute Maximum Ratings  
Under no circumstances must the absolute maximum ratings given in Table 2 be violated. Stress  
exceeding one or more of the limiting values may cause permanent damage to the device.  
Parameter  
Min  
Max  
Units Condition  
Supply voltage (VDD)  
Voltage on any digital pin  
0.3  
3.9  
V
V
All supply pins must have the same voltage  
0.3 VDD + 0.3,  
max 3.9  
Voltage on the pins RF_P, RF_N  
and DCOUPL  
0.3  
50  
2.0  
V
Voltage ramp-up rate  
Input RF level  
120  
10  
kV/µs  
dBm  
C
Storage temperature range  
Solder reflow temperature  
ESD CC1110Fx  
150  
260  
1000  
Device not programmed  
According to IPC/JEDEC J-STD-020D  
C
V
According to JEDEC STD 22, method A114, Human  
Body Model (HBM)  
750  
750  
750  
V
V
V
According to JEDEC STD 22, C101C, Charged Device  
Model (CDM)  
ESD CC1110Fx  
ESD CC1111x  
ESD CC1111x  
According to JEDEC STD 22, method A114, Human  
Body Model (HBM)  
According to JEDEC STD 22, C101C, Charged Device  
Model (CDM)  
Table 2: Absolute Maximum Ratings  
Caution!  
ESD  
sensitive  
device.  
Precaution should be used when handling  
the device in order to prevent permanent  
damage.  
SWRS033H  
Page 7 of 246  
 
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