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CC1110F32RHHR 参数 Datasheet PDF下载

CC1110F32RHHR图片预览
型号: CC1110F32RHHR
PDF下载: 下载PDF文件 查看货源
内容描述: 低功耗的SoC (系统级芯片)与MCU,存储器,低于1GHz的射频收发器和USB控制器 [Low-Power SoC (System-on-Chip) with MCU, Memory, Sub-1 GHz RF Transceiver, and USB Controller]
分类和应用: 存储射频控制器
文件页数/大小: 249 页 / 3133 K
品牌: TI [ TEXAS INSTRUMENTS ]
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CC1110Fx / CC1111Fx  
Parameter  
Min  
Typ  
Max  
Unit Condition/Note  
Spurious emissions  
radiated,  
Harmonics not  
included  
Measured on CC1110EM reference designs ([1], [2] and [3])  
with 10 dBm CW, TX frequency at 315.00 MHz, 433.00 MHz,  
868.00 or 915.00 MH. For CC1111Fx see DN016 [14]  
Please refer to register TEST1on Page 226 for required  
settings in RX and TX  
315 MHz  
433 MHz  
< −58  
< −53  
dBm Frequencies below 960 MHz  
Frequencies above 960 MHz  
< −50  
< −54  
< −56  
dBm Frequencies below 1 GHz  
Frequencies above 1 GHz  
Frequencies within 47 - 74, 87.5 - 118, 174 - 230, 470 - 862  
MHz  
868 MHz  
915 MHz  
< −56  
< −54  
< 56  
dBm Frequencies below 1 GHz  
Frequencies above 1 GHz  
Frequencies within 47 - 74, 87.5 - 118, 174 - 230, 470 - 862  
MHz.  
< −51  
< −60  
dBm Frequencies below 960 MHz  
Frequencies above 960 MHz  
Table 10: RF Transmit Section  
Typical Variation in Output Power (10dBm) over Frequency and  
Temperature  
12  
11  
10  
9
Avg 40°C  
Avg 25°C  
Avg 85°C  
8
7
6
750  
800  
850  
900  
950  
Frequency [MHz]  
Figure 3: Typical Variation in Output Power over Frequency and Temperature  
(10 dBm output power)  
SWRS033H  
Page 18 of 246  
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