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BQ4014Y 参数 Datasheet PDF下载

BQ4014Y图片预览
型号: BQ4014Y
PDF下载: 下载PDF文件 查看货源
内容描述: 256Kx8非易失SRAM\n [256Kx8 Nonvolatile SRAM ]
分类和应用: 静态存储器
文件页数/大小: 11 页 / 765 K
品牌: TI [ TEXAS INSTRUMENTS ]
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bq4014/bq4014Y  
Write Cycle (T = 0 to 70°C, V  
V  
V  
)
CCmax  
A
CCmin  
CC  
-120  
-85  
Min. Max.  
Min. Max.  
Symbol  
tWC  
Parameter  
Write cycle time  
Units  
ns  
Conditions/Notes  
85  
75  
75  
-
-
-
120  
100  
100  
-
-
-
tCW  
Chip enable to end of write  
Address valid to end of write  
ns  
(1)  
(1)  
tAW  
ns  
Measured from address valid to  
beginning of write. (2)  
tAS  
Address setup time  
Write pulse width  
0
65  
5
-
-
0
85  
5
-
-
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Measured from beginning of write to  
end of write. (1)  
tWP  
Write recovery time  
(write cycle 1)  
Measured from WE going high to end  
of write cycle. (3)  
tWR1  
tWR2  
tDW  
tDH1  
tDH2  
tWZ  
-
-
Write recovery time  
(write cycle 2)  
Measured from CE going high to end  
of write cycle. (3)  
15  
35  
0
-
15  
45  
0
-
Measured to first low-to-high  
transition of either CE or WE.  
Data valid to end of write  
-
-
Data hold time  
(write cycle 1)  
Measured from WE going high to end  
of write cycle. (4)  
-
-
Data hold time  
(write cycle 2)  
Measured from CE going high to end  
of write cycle. (4)  
10  
0
-
10  
0
-
Write enabled to output in  
high Z  
30  
-
40  
-
I/O pins are in output state. (5)  
I/O pins are in output state. (5)  
Output active from end of  
write  
tOW  
0
0
Notes:  
1. A write ends at the earlier transition of CE going high and WE going high.  
2. A write occurs during the overlap of a low CE and a low WE. A write begins at the later transition  
of CE going low and WE going low.  
3. Either tWR1 or tWR2 must be met.  
4. Either tDH1 or tDH2 must be met.  
5. If CE goes low simultaneously with WE going low or after WE going low, the outputs remain in  
high-impedance state.  
Sept. 1992  
6
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