bq24170
bq24172
SLUSAD2A –NOVEMBER 2010–REVISED NOVEMBER 2010
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
TYPICAL APPLICATIONS
Q2
Q1
RAC: 10m
System
12V Adapter
C12: 0.1µ
RIN
2
C11: 0.1µ
C4: 10µ
CIN
2.2?
PVCC
ACN
Q3
R14
1k
ACP
R12
4.02k
CMSRC
BATDRV
R11
4.02k
VBAT
ACDRV
VREF
L: 3.3?H
RSR:10m
C2: 1µ
VBAT
VREF
SW
D1
D2
R2
232k
VREF
bq24170
C8
0.1?
C5
0.047?
ISET
R4
100k
R3
32.4k
BTST
C9, C10
10? 10?
R1
10
C7
0.1?
R5
22.1k
ACSET
AVCC
REGN
C6
1?
C1
1µ
R6
1000k
PGND
SRP
OVPSET
C3: 0.1?
R7
100k
VREF
TTC
TS
SRN
R8
5.23k
CELL
Float
R10
1.5k
R9
30.1k
RT
103AT
THERMAL
PAD
STAT
VREF
D3
Figure 1. Typical Application Schematic (12V input, 2 cell battery 8.4V, 2A charge current, 0.2A
pre-charge/termination current, 3A DPM current, 18V input OVP, 0 – 45°C TS)
4
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