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U6083B 参数 Datasheet PDF下载

U6083B图片预览
型号: U6083B
PDF下载: 下载PDF文件 查看货源
内容描述: PWM电源控制与干扰抑制 [PWM Power Control with Interference Suppression]
分类和应用: 开关光电二极管异步传输模式ATM
文件页数/大小: 8 页 / 136 K
品牌: TEMIC [ TEMIC SEMICONDUCTORS ]
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U6083B  
Time delay, t , is as follows:  
occurs only when the short-circuit detection circuit has  
responded.  
d
t = C  
V / (I – I )  
T5 ch dis  
d
5
After a power-on reset, the output is inactive for half an  
oscillator cycle. During this time, the supply voltage  
capacitor can be charged so that current limitation is guar-  
anteed in the event of a short-circuit when the IC is  
switched on for the first time.  
With C = 100 nF and V = 10.4 V, I =13 A,  
5
T5  
ch  
I
= 3 A, we have  
dis  
t = 100 nF 10.4 V/ (13 A – 3 A)  
d
t = 104 ms  
d
Pins 7 and 8, Charge Pump and Output,  
2. Current Limitation:  
Output, Pin 8, is suitable for controlling a power  
The lamp current is limited by a control amplifier to MOSFET. During the active integration phase, the supply  
protect the external power transistor. The voltage drop current of the operational amplifier is mainly supplied by  
across an external shunt resistor acts as the measured the capacitor C (bootstrapping). In addition, a trickle  
3
variable. Current limitation takes place for a voltage drop charge is generated by an integrated oscillator  
of  
V
–V  
100 mV. Owing to the difference (f  
10 mV, it is ensured that current limitation permits a gate voltage supply at a duty cycle of 100%.  
400 kHz) and a voltage doubler circuit. This  
T1  
T2  
7
V
T1  
Absolute Maximum Ratings  
Parameters  
Junction temperature  
Symbol  
Value  
150  
Unit  
°C  
T
j
Ambient temperature range  
Storage temperature range  
T
T
–40 to +110  
–55 to +125  
°C  
°C  
amb  
stg  
Thermal Resistance  
Parameters  
Symbol  
R
thJA  
Value  
120  
Unit  
K/W  
Junction ambient  
Electrical Characteristics  
T
amb  
= –40 to +110°C, V  
= 9 to 16.5 V, (basic function is guaranteed between 6.0 V to 9.0 V) reference point ground,  
Batt  
unless otherwise specified (see figure 1). All other values refer to Pin GND (Pin 2).  
Parameters  
Current consumption  
Supply voltage  
Test Conditions / Pins  
Pin 1  
Overvoltage detection,  
stage 1  
Symbol  
Min.  
Typ.  
Max.  
7.9  
25  
Unit  
mA  
V
I
S
V
Batt  
Stabilized voltage  
Battery undervoltage  
detection  
I = 10 mA  
– on  
– off  
Pin 1  
V
24.5  
4.4  
4.8  
27.0  
5.6  
6.0  
V
V
S
s
V
Batt  
5.0  
5.4  
4 (8)  
TELEFUNKEN Semiconductors  
Rev. A1, 14-Feb-97  
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