SUP/SUB75N06-08
Typical Characteristics (25_C Unless Otherwise Noted)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.5
2.0
1.5
1.0
0.5
0
100
V
= 10 V
= 30 A
GS
I
D
T = 150_C
J
T = 25_C
J
10
1
–50 –25
0
25 50 75 100 125 150 175
0.3
0.6
0.9
1.2
1.5
T
J
– Junction Temperature (_C)
V
– Source-to-Drain Voltage (V)
SD
Thermal Ratings
Maximum Avalanche and Drain Current
Safe Operating Area
vs. Case Temperature
500
100
Limited
10 ms
100 ms
1 ms
80
60
40
20
0
by r
DS(on)
100
10
T
= 25_C
C
Single Pulse
10 ms
100 ms
dc
1
0
25
50
75
100
125
150
175
0.1
1
10
100
T
C
– Case Temperature (_C)
V
– Drain-to-Source Voltage (V)
DS
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–5
–4
–3
–2
–1
10
10
10
10
10
1
3
Square Wave Pulse Duration (sec)
4
Siliconix
S-47969—Rev. D, 08-Jul-96
TEMIC [ TEMIC SEMICONDUCTORS ]
