SUP/SUB75N06-08
N-Channel Enhancement-Mode Transistors
Product Summary
V(BR)DSS (V)
rDS(on) (W)
ID (A)
a
60
0.008
75
D
TO-220AB
TO-263
G
DRAIN connected to TAB
G
D S
Top View
G D S
S
N-Channel MOSFET
SUB75N06-08
Top View
SUP75N06-08
Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)
Parameter
Symbol
Limit
Unit
Gate-Source Voltage
V
"20
V
GS
a
T
= 25_C
= 125_C
75
C
Continuous Drain Current
J
I
D
T
C
55
240
60
A
Pulsed Drain Current
I
DM
Avalanche Current
I
AR
b
Repetitive Avalanche Energy
L = 0.1 mH
E
280
mJ
W
AR
c
T
C
= 25_C (TO-220AB and TO-263)
187
Power Dissipation
P
D
d
T
A
= 25_C (TO-263)
3.7
Operating Junction and Storage Temperature Range
T , T
J
–55 to 175
_C
stg
Thermal Resistance Ratings
Parameter
Symbol
Limit
Unit
d
PCB Mount (TO-263)
40
62.5
0.8
Junction-to-Ambient
Junction-to-Case
R
thJA
R
thJC
_C/W
Free Air (TO-220AB)
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document # 70283.
A SPICE Model data sheet is available for this product (FaxBack document #70527).
Siliconix
1
S-47969—Rev. D, 08-Jul-96
TEMIC [ TEMIC SEMICONDUCTORS ]
