SUP/SUB75N06-08
Typical Characteristics (25_C Unless Otherwise Noted)
Output Characteristics
Transfer Characteristics
250
= 10, 9, 8 V
200
150
100
50
V
GS
7 V
200
150
100
50
6 V
5 V
T
= 125_C
C
25_C
4 V
8
–55_C
6
0
0
0
2
4
6
10
0
2
4
8
10
V
– Drain-to-Source Voltage (V)
V
– Gate-to-Source Voltage (V)
GS
DS
Transconductance
On-Resistance vs. Drain Current
120
100
80
60
40
20
0
0.010
0.008
0.006
0.004
0.002
0
T
= –55_C
C
25_C
V
= 10 V
GS
125_C
V
= 20 V
GS
0
20
40
60
80
100
0
20
40
60
80
100
120
V
– Gate-to-Source Voltage (V)
GS
I
D
– Drain Current (A)
Capacitance
Gate Charge
7000
6000
5000
4000
3000
2000
1000
0
20
16
12
8
V
= 30 V
= 75 A
DS
I
D
C
iss
4
C
oss
C
rss
0
0
10
20
30
40
50
60
0
25
50
Q – Total Gate Charge (nC)
g
75
100
125
150
175
V
– Drain-to-Source Voltage (V)
DS
Siliconix
S-47969—Rev. D, 08-Jul-96
3
TEMIC [ TEMIC SEMICONDUCTORS ]
