APPENDIX C
FORMS A PART OF SMD 5962-89598
Die physical dimensions.
Die size: 15 860 X 5 410 microns
Die thickness: 475 microns
Interface materials.
Top metallization: Aluminium + 1% Copper
Backside metallization: bare silicon
Glassivation.
Type: Silicon Oxide + Nitride
Thickness: 15 000 Angstroms
Substrate: Single crystal silicon
Assembly related information.
Substrate potential: not connected
Special assembly instructions: None
Figure A-1, MMO-65608EV Bond Pad Locations and Functions – Continued
SIZE
STANDARD
MICROCIRCUIT DRAWING
5962-89598
A
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
L
SHEET
52
DSCC FORM 2234
APR 97
TEMIC [ TEMIC SEMICONDUCTORS ]
